Littelfuse - MWT-773

  1. Home
  2. Littelfuse - MWT-773
MWT-773 by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MWT-773
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: GOLD; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 2;
Datasheet MWT-773 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: GALLIUM ARSENIDE
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Transistor Application: AMPLIFIER
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: GOLD
JESD-609 Code: e4
No. of Terminals: 4
Qualification: Not Qualified
Terminal Position: UNSPECIFIED
Package Style (Meter): MICROWAVE
JESD-30 Code: X-CXMW-F4
No. of Elements: 1
Package Shape: UNSPECIFIED
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: K BAND
Moisture Sensitivity Level (MSL): 2
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SD2943 by STMicroelectronics

SD2943

STMicroelectronics

SD2943 by STMicroelectronics is an N-CHANNEL RF Power FET with a 130V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 40A and 648W power dissipation. Ideal for AMPLIFIER applications due to its ENHANCEMENT MODE operation and SOURCE case connection.
LET8180 by STMicroelectronics

LET8180

STMicroelectronics

LET8180 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 289 W.
MRF6VP2600HR6 by Freescale Semiconductor

MRF6VP2600HR6

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: ENHANCEMENT MODE;
MRFE6VP6300HR5 by Freescale Semiconductor

MRFE6VP6300HR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
PD55003-01 by STMicroelectronics

PD55003-01

STMicroelectronics

PD55003-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 40V min breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 2.5A. Ideal for compact surface mount designs, it excels in high-temperature environments up to 150 °C.
MRF151G by M/a-com Technology Solutions

MRF151G

M/a-com Technology Solutions

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 40 A;
A2T20H160W04NR3 by NXP Semiconductors

A2T20H160W04NR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; Package Body Material: PLASTIC/EPOXY;
FLL57MK by Fujitsu

FLL57MK

Fujitsu

Fujitsu's FLL57MK is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring CERAMIC, METAL-SEALED COFIRED package and 21.4W power dissipation at 175°C, it offers reliable performance in DEPLETION MODE operation.
STAP57030 by STMicroelectronics

STAP57030

STMicroelectronics

STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
BLL6H0514-25,112 by NXP Semiconductors

BLL6H0514-25,112

NXP Semiconductors

NXP Semiconductors' BLL6H0514-25,112 is an N-CHANNEL RF Power FET with 100V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for L BAND applications, offering 2.5A Drain Current and a max temperature of 150°C. Ideal for AMPLIFIER circuits, it features a METAL-OXIDE SEMICONDUCTOR technology in a FLANGE MOUNT package style.
PTFA092201EV4R250XTMA1 by Infineon Technologies

PTFA092201EV4R250XTMA1

Infineon Technologies

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
GS61008T-MR by Gan Systems

GS61008T-MR

Gan Systems

GS61008T-MR by Gan Systems is an N-CHANNEL RF FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for SWITCHING applications at 100V DS Breakdown Voltage. With GALLIUM NITRIDE technology, it handles up to 90A ID and supports VERY HIGH FREQUENCY BAND operations.
AFT05MS003NT1 by Freescale Semiconductor

AFT05MS003NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;
TIM5964-35SLA-422 by Toshiba

TIM5964-35SLA-422

Toshiba

Toshiba's TIM5964-35SLA-422 is an N-channel RF Power FET with a ceramic-metal-sealed co-fired package. Operating in depletion mode, it has a max drain current of 20A and can handle up to 115.4W power dissipation. Ideal for amplifier applications in the C band due to its high-frequency capabilities and source case connection.
BLF3G21-30,112 by NXP Semiconductors

BLF3G21-30,112

NXP Semiconductors

NXP Semiconductors' BLF3G21-30,112 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max Drain Current of 4.5A and operates in ENHANCEMENT MODE at up to 200°C.
A2I25D025NR1 by Freescale Semiconductor

A2I25D025NR1

Freescale Semiconductor

RF Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;
PD85015STR-E by STMicroelectronics

PD85015STR-E

STMicroelectronics

PD85015STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
STAC3932F by STMicroelectronics

STAC3932F

STMicroelectronics

STAC3932F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 20 A, a breakdown voltage of 250 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 625 W.
934065672112 by NXP Semiconductors

934065672112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Highest Frequency Band: L BAND; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
RF5L05950CF2 by STMicroelectronics

RF5L05950CF2

STMicroelectronics

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;