Littelfuse - MWT-H4

  1. Home
  2. Littelfuse - MWT-H4
MWT-H4 by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MWT-H4
Description N-CHANNEL; Maximum Drain Current (Abs) (ID): .105 A; Maximum Drain Current (ID): .105 A;
Datasheet MWT-H4 Datasheet
NAME DESCRIPTION
Maximum Drain Current (ID): .105 A
Maximum Drain Current (Abs) (ID): .105 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BF510 by NXP Semiconductors

BF510

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
SHF-0189Z by Rf Micro Devices

SHF-0189Z

Rf Micro Devices

SHF-0189Z by Rf Micro Devices is a N-CHANNEL RF FET for SWITCHING applications. It operates in DEPLETION MODE with a 9V DS Breakdown Voltage and 0.2A Drain Current. This SMALL OUTLINE transistor has a max power dissipation of 0.8W, suitable for C BAND frequencies up to 165°C.
BF909WR-TAPE-7 by NXP Semiconductors

BF909WR-TAPE-7

NXP Semiconductors

BF909WR-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 7V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate enhancement mode. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
J212 by NXP Semiconductors

J212

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;
BF998-TAPE-7 by NXP Semiconductors

BF998-TAPE-7

NXP Semiconductors

BF998-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 12V min DS breakdown voltage, operates in the ultra-high frequency band, and supports dual gate depletion mode. This compact surface mount transistor ensures reliable performance up to 150 °C.
BF992R-T by NXP Semiconductors

BF992R-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): .04 pF; Transistor Element Material: SILICON;
BF998,215 by NXP Semiconductors

BF998,215

NXP Semiconductors

BF998,215 by NXP Semiconductors is an N-CHANNEL RF FET with a 12V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQ BAND and has a 0.03A Drain Current. Ideal for AMPLIFIER applications, this transistor features DUAL GATE DEPLETION MODE and a max power dissipation of 0.2W.
TGF1350XPMX by Texas Instruments

TGF1350XPMX

Texas Instruments

TGF1350XPMX by Texas Instruments is an N-CHANNEL RF FET with 8V DS Breakdown Voltage, 8dB Power Gain, and operates in DEPLETION MODE. Ideal for KU BAND applications, it has a 0.1A Drain Current, 0.7W Power Dissipation at 150°C, and features GALLIUM ARSENIDE technology.
SHF-0189Z by Sirenza Microdevices

SHF-0189Z

Sirenza Microdevices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;
BF244B by National Semiconductor

BF244B

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BF992TRL13 by NXP Semiconductors

BF992TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;
3N205 by Texas Instruments

3N205

Texas Instruments

3N205 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DUAL GATE mode, it offers 0.05A Drain Current and 0.36W Power Dissipation. With METAL-OXIDE SEMICONDUCTOR technology, it operates at up to 200°C temperature.
BLF184XR by NXP Semiconductors

BLF184XR

NXP Semiconductors

BLF184XR by NXP Semiconductors is an N-CHANNEL RF FET with 135V DS Breakdown Voltage, 22.8 dB Power Gain, and operates in the ULTRA HIGH FREQUENCY BAND. It is commonly used as an AMPLIFIER in applications requiring a COMMON SOURCE configuration. The transistor comes in a CERAMIC, METAL-SEALED COFIRED package with FLANGE MOUNT style for surface mounting.
BF862TRL13 by NXP Semiconductors

BF862TRL13

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; Maximum Drain Current (ID): .04 A;
934056334115 by NXP Semiconductors

934056334115

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Transistor Application: AMPLIFIER;
CLF1G0035-100PU by Ampleon Netherlands B V

CLF1G0035-100PU

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 150 V; JESD-30 Code: R-CDFM-F4;
MMBFJ305 by Onsemi

MMBFJ305

Onsemi

Onsemi's MMBFJ305 is an N-CHANNEL RF FET in a PLASTIC/EPOXY package. It operates in DEPLETION MODE with a max power dissipation of 0.225W, suitable for AMPLIFIER applications. With GULL WING terminals and SILICON element material, it can handle up to 150°C operating temperature.
BF513-T by NXP Semiconductors

BF513-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Terminal Form: GULL WING;
3N203 by Texas Instruments

3N203

Texas Instruments

3N203 by Texas Instruments is a N-CHANNEL FET with 25V DS Breakdown Voltage, 20dB Power Gain, and 0.05A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DUAL GATE configuration and DEPLETION MODE operation. Package: METAL ROUND shape with WIRE terminals, suitable for high-temp environments up to 200°C.
BF1208D,115 by NXP Semiconductors

BF1208D,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 6; JESD-609 Code: e3; Minimum Power Gain (Gp): 24 dB;