VMK165-007T by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	VMK165-007T
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Drain-Source On Resistance: .006 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	VMK165-007T Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	165 A
Maximum Pulsed Drain Current (IDM):	660 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	7
Maximum Power Dissipation (Abs):	390 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.006 ohm
JEDEC-95 Code:	TO-240AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	70 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	165 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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