M/a-com Technology Solutions - CA70-2

  1. Home
  2. M/a-com Technology Solutions - CA70-2
CA70-2 by M/a-com Technology Solutions

Image shown is a representation only.

Manufacturer M/a-com Technology Solutions
Manufacturer's Part Number CA70-2
Description WIDE BAND LOW POWER; Minimum Operating Temperature: 0 Cel; Gain: 7 dB; Construction: COAXIAL; Maximum Voltage Standing Wave Ratio: 2.1; Maximum Input Power (CW): 13 dBm;
Datasheet CA70-2 Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.1
Construction: COAXIAL
Maximum Input Power (CW): 13 dBm
Minimum Operating Frequency: 10 MHz
Characteristic Impedance: 50 ohm
Additional Features: SMA, LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 50 Cel
Maximum Operating Frequency: 250 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: 0 Cel
Gain: 7 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

HMC752LC4 by Analog Devices

HMC752LC4

Analog Devices

HMC752LC4 by Analog Devices is a wide band low power RF amplifier with 23 dB gain. It operates b/w 24-28 GHz, handles -5 dBm input power, and has a characteristic impedance of 50 ohms. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
HMC372LP3ETR by Analog Devices

HMC372LP3ETR

Analog Devices

HMC372LP3ETR by Analog Devices is a wide band low power RF amplifier with 1 function and 16 terminals. It operates at temperatures ranging from -40 to 85°C and requires a 5V power supply. This surface mount device is made of plastic/epoxy and is commonly used in RF and microwave applications.
HMC636ST89TR by Hittite Microwave

HMC636ST89TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TO-243;
MW7IC2040NR1 by NXP Semiconductors

MW7IC2040NR1

NXP Semiconductors

NXP Semiconductors' MW7IC2040NR1 is a MOS RF amplifier with 29.5 dB gain, operating from 1805-1990 MHz. It handles up to 25 dBm CW input power, with VSWR of 5 and characteristic impedance of 50 ohm. Ideal for narrowband high-power applications in RF and microwave systems.
HMC903LP3ETR by Analog Devices

HMC903LP3ETR

Analog Devices

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.
MGA-86576-STR by Hewlett Packard

MGA-86576-STR

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC863ALC4TR by Analog Devices

HMC863ALC4TR

Analog Devices

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.
MMG3014NT1 by Freescale Semiconductor

MMG3014NT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;
GALI-6F by Mini-circuits

GALI-6F

Mini-circuits

GALI-6F by Mini-circuits is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 20 dBm CW input power. Ideal for RF & microwave applications requiring compact surface mount components.
NBB-400-D by Rf Micro Devices

NBB-400-D

Rf Micro Devices

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Maximum Voltage Standing Wave Ratio: 1.9;
CMPA901A035F by Wolfspeed

CMPA901A035F

Wolfspeed

WIDE BAND HIGH POWER;
AD8350ARMZ15 by Analog Devices

AD8350ARMZ15

Analog Devices

AD8350ARMZ15 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain, operating up to 1000 MHz. It can handle max input power of 8 dBm and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.
6001 by Teledyne Technologies

6001

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: METAL; Technology: GAAS; Power Supplies (V): 7;
RDA1005LTR7 by Qorvo

RDA1005LTR7

Qorvo

Qorvo's RDA1005LTR7 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount components in RF & microwave systems.
A33 by M/a-com Technology Solutions

A33

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;
MSA-1105 by Avantek

MSA-1105

Avantek

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5.5;
HMC475ST89E by Hittite Microwave

HMC475ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;
TQP7M9102-PCB2600 by Qorvo

TQP7M9102-PCB2600

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
RA18H1213G-101 by Mitsubishi Electric

RA18H1213G-101

Mitsubishi Electric

The Mitsubishi Electric RA18H1213G-101 is a RF amplifier module with 23 dB gain, operating b/w 1240-1300 MHz. It has a max input power of 24.77 dBm and VSWR of 3, suitable for narrowband high-power applications. With hybrid technology and operating temperatures from -30 to 110°C, it's ideal for various RF and microwave systems.
TQP7M9102 by Qorvo

TQP7M9102

Qorvo

TQP7M9102 by Qorvo is a wide band medium power RF amplifier with 15 dB gain, operating from 400 MHz to 4000 MHz. It can handle up to 27 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.