M/a-com Technology Solutions - NPTB00025B

  1. Home
  2. M/a-com Technology Solutions - NPTB00025B
NPTB00025B by M/a-com Technology Solutions

Image shown is a representation only.

Manufacturer M/a-com Technology Solutions
Manufacturer's Part Number NPTB00025B
Description RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet NPTB00025B Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CGHV37400F by Wolfspeed

CGHV37400F

Wolfspeed

RF Power Field-Effect Transistors;
SD2904 by STMicroelectronics

SD2904

STMicroelectronics

SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.
SD2932 by STMicroelectronics

SD2932

STMicroelectronics

SD2932 by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 500W. It operates in the ultra-high frequency band, making it ideal for high-power applications like amplifiers and transmitters. The transistor features a metal-oxide semiconductor technology and can withstand temperatures up to 200°C.
BLF178XR,112 by Ampleon Netherlands B V

BLF178XR,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Minimum DS Breakdown Voltage: 110 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
A2G22S251-01SR3 by NXP Semiconductors

A2G22S251-01SR3

NXP Semiconductors

NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.
AFT27S006NT1 by NXP Semiconductors

AFT27S006NT1

NXP Semiconductors

NXP Semiconductors' AFT27S006NT1 is a single N-channel RF Power FET with 21 dB min power gain, operating in the ultra-high frequency band. This enhancement mode transistor has a max power dissipation of 1.5W and operates b/w -40 to 150°C. It is commonly used in applications requiring high-frequency signal amplification and transmission.
AFT09MS015NT1 by Freescale Semiconductor

AFT09MS015NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
A3T09S100NR1 by NXP Semiconductors

A3T09S100NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
SD57030-01 by STMicroelectronics

SD57030-01

STMicroelectronics

SD57030-01 by STMicroelectronics is an N-channel RF Power FET with a 65V DS breakdown voltage and 4A max drain current. It operates in the ultra-high frequency band, suitable for amplifier applications. This enhancement mode transistor has a max power dissipation of 74W and can withstand temperatures up to 200°C.
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.
MRF171A by M/a-com Technology Solutions

MRF171A

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 115 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MRF1511NT1 by NXP Semiconductors

MRF1511NT1

NXP Semiconductors

NXP Semiconductors' MRF1511NT1 is a N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 4A Drain Current. Ideal for amplifier applications in the VHF band, it features a max power dissipation of 62.5W in a small outline package with source connection and tin terminal finish.
MRFE6VS25GNR1 by NXP Semiconductors

MRFE6VS25GNR1

NXP Semiconductors

NXP Semiconductors' MRFE6VS25GNR1 is a single N-channel RF Power FET with 24.5 dB power gain, operating in the ultra-high frequency band. It features a min DS breakdown voltage of 133 V and can handle up to 25 W power dissipation. Ideal for applications requiring high-power amplification in the RF domain.
SD2933W by STMicroelectronics

SD2933W

STMicroelectronics

SD2933W by STMicroelectronics is an N-CHANNEL RF Power FET with a max drain current of 40A and power dissipation of 648W. It operates at up to 200 °C, making it suitable for high-power applications in surface-mount configurations.
MRF134 by New Jersey Semiconductor Products

MRF134

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Transistor Element Material: SILICON; Maximum Drain Current (ID): .9 A; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
STAC1214-250 by STMicroelectronics

STAC1214-250

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRFE6VP5600HR6 by Freescale Semiconductor

MRFE6VP5600HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Minimum DS Breakdown Voltage: 130 V; JESD-30 Code: R-CDFM-F4;
A2T14H450-23NR6 by NXP Semiconductors

A2T14H450-23NR6

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Transistor Application: AMPLIFIER; Highest Frequency Band: L BAND;
STAP85025S by STMicroelectronics

STAP85025S

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934065232112 by NXP Semiconductors

934065232112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Package Shape: RECTANGULAR; Case Connection: SOURCE;