Maxim Integrated - DS2401A+

  1. Home
  2. Maxim Integrated - DS2401A+
DS2401A+ by Maxim Integrated

Image shown is a representation only.

Manufacturer Maxim Integrated
Manufacturer's Part Number DS2401A+
Description MEMORY CIRCUIT;
Datasheet DS2401A+ Datasheet
In Stock15,280
NAME DESCRIPTION
Memory IC Type: MEMORY CIRCUIT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
15,280 - -

Popular Products

Category Top Products

CY15B102Q-SXET by Infineon Technologies

CY15B102Q-SXET

Infineon Technologies

Infineon's CY15B102Q-SXET is a 256Kx8 memory IC with synchronous operation, suitable for automotive applications. It operates at 3.3V with power supplies of 2.5/3.3V, featuring a small outline package style and Gull Wing terminal form. With a max operating temperature of 125°C, it offers high memory density of 2097152 bits for reliable performance in automotive environments.
SN7489J by Texas Instruments

SN7489J

Texas Instruments

SN7489J by Texas Instruments is a 16x4 memory circuit IC with CMOS technology. It operates asynchronously at 5V, with open-collector output and a max access time of 60ns. Ideal for applications requiring parallel memory storage in commercial temperature environments.
M28F221-80XN5 by STMicroelectronics

M28F221-80XN5

STMicroelectronics

Other Memory ICs;
DS28E80Q+UW by Analog Devices

DS28E80Q+UW

Analog Devices

MEMORY CIRCUIT;
MB85RS4MTYPN-G-AWEWE1 by Fujitsu

MB85RS4MTYPN-G-AWEWE1

Fujitsu

Other Memory ICs; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 255; Maximum Time At Peak Reflow Temperature (s): 5;
MT29F4G01ADAGDWB-IT:G by Micron Technology

MT29F4G01ADAGDWB-IT:G

Micron Technology

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MR256A08BMA35 by Everspin Technologies

MR256A08BMA35

Everspin Technologies

MR256A08BMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for commercial applications requiring low profile, fine pitch grid array package style.
AT88SC0104CA-SH by Atmel

AT88SC0104CA-SH

Atmel

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Width: 3.9 mm;
TMS27C32-100NL by Texas Instruments

TMS27C32-100NL

Texas Instruments

Other Memory ICs;
DS1217A/192K-25 by Analog Devices

DS1217A/192K-25

Analog Devices

DS1217A/192K-25 by Analog Devices is a 24Kx8 CMOS memory circuit with 196608-bit density. It operates asynchronously at 5V, with a max access time of 250ns. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.
47L16-E/P by Microchip Technology

47L16-E/P

Microchip Technology

47L16-E/P by Microchip Technology is a 2KX8 EEPROM+SRAM memory IC with 16384 bit density. Operating in synchronous mode, it has a max access time of 400 ns and operates b/w -40 to 125 °C. Ideal for automotive applications, this rectangular IN-LINE package offers reliable performance in various systems.
AT88SC25616C-SU-T by Atmel

AT88SC25616C-SU-T

Atmel

CRYPTO MEMORY; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel; Length: 4.925 mm;
M36W108B120ZM5 by STMicroelectronics

M36W108B120ZM5

STMicroelectronics

M36W108B120ZM5 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 1M x 8 organization with mixed FLASH+SRAM technology. It operates b/w -20 °C to 85°C and supports power supplies of 2.7V to 3.6V. Ideal for compact applications requiring efficient data storage and retrieval.
M36W0R6040B0ZAQF by STMicroelectronics

M36W0R6040B0ZAQF

STMicroelectronics

M36W0R6040B0ZAQF from STMicroelectronics is a mixed memory IC featuring 4M x 16 organization with Flash+PSRAM technology. It operates asynchronously at a nominal voltage of 1.8V, supporting temperatures from -30 °C to 85 °C. Ideal for compact applications, it has a thin profile grid array package with low power consumption.
M36W216T100ZA1 by STMicroelectronics

M36W216T100ZA1

STMicroelectronics

M36W216T100ZA1 from STMicroelectronics is a low-profile, asynchronous memory IC with a 3V nominal supply and operates b/w 2.7V to 3.3V. It features a density of 16Mbit, organized as 1Mx16, and supports commercial temp ranges up to 70 °C. Ideal for compact applications requiring efficient data storage in embedded systems.
SNJ54ALS871FK by Texas Instruments

SNJ54ALS871FK

Texas Instruments

SNJ54ALS871FK by Texas Instruments is a MILITARY-grade TTL IC with 28 terminals in a CHIP CARRIER package. It operates b/w -55°C to 125°C, making it suitable for harsh environments. This IC is ideal for applications requiring high reliability and performance in military and aerospace systems.
M36LLR8860B1ZAQF by STMicroelectronics

M36LLR8860B1ZAQF

STMicroelectronics

M36LLR8860B1ZAQF by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates efficiently at temperatures from -25 °C to 85 °C and supports surface mount applications. Ideal for compact devices requiring high-density memory solutions.
DS1204U-G4C by Analog Devices

DS1204U-G4C

Analog Devices

Analog Devices' DS1204U-G4C is a 256-bit MEMORY CIRCUIT with CMOS technology. Operating at 5V, it has a 256X1 organization and operates SYNCHRONOUSLY up to 70 °C. Ideal for applications requiring reliable memory storage in COMMERCIAL-grade environments.
TMS27L08JL by Texas Instruments

TMS27L08JL

Texas Instruments

TMS27L08JL by Texas Instruments is a 1KX8 OTP ROM memory IC with 8192-bit density and 450ns access time. It operates b/w 0-70°C, featuring a 3-STATE output and MOS technology. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.
M36W108B120ZN5T by STMicroelectronics

M36W108B120ZN5T

STMicroelectronics

STMicroelectronics M36W108B120ZN5T is a 1MX8 memory IC with 8388608 bit memory density. It operates in asynchronous mode, with a supply voltage range of 2.7V to 3.6V. This GRID ARRAY package is suitable for applications requiring high memory capacity and low profile design.