Maxim Integrated - DS9093S+

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Length: 18.41 mm;

MEMORY CIRCUIT;

Other Memory ICs;

TMS2150-55JD by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 55ns access time, 135mA max supply current, and 5V nominal voltage. It is ideal for applications requiring fast memory access in commercial-grade environments.

Other Memory ICs;

M36W216BI85ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at 3V and supports a max access time of 85ns. Ideal for commercial applications requiring efficient data storage and retrieval.

SNJ54AS8834GB by Texas Instruments is a 2560-bit MEMORY CIRCUIT IC with 64x40 organization and TTL technology. Operating in SYNCHRONOUS mode at temperatures from -55°C to 125°C, it has a supply voltage range of 4.5V to 5.5V, making it ideal for MILITARY applications requiring high-performance memory solutions.

Other Memory ICs;

M36W108T100ZN6T by STMicroelectronics is a 1MX8 memory IC with 8388608 bit memory density. Operating in asynchronous mode, it has a supply voltage range of 2.7V to 3.6V and temperature grade of industrial. With a package style of grid array, it is suitable for applications requiring high-density memory storage in industrial environments.

SN74AS871N1 by Texas Instruments is a TTL technology IC with 28 terminals in an IN-LINE package. It operates b/w 0°C to 70°C, making it suitable for commercial applications. With a rectangular plastic/epoxy body, it is commonly used in memory functions requiring dual terminal positions.

FM3808-70-T by Ramtron Int. is a 32KX8 MEMORY CIRCUIT IC with 262144 bit MEMORY DENSITY. Operating at SYNCHRONOUS mode, it has a supply voltage range of 4.5V to 5.5V and temp range of -40°C to 85°C. Ideal for industrial applications requiring high memory density in compact form factor.

Analog Devices' DS2401-SL+T&R is a 64-bit memory circuit IC with CMOS technology. It operates asynchronously at 5V, with a supply range of 2.8-6V and industrial temperature grade. The through-hole package style makes it suitable for various applications in electronics.

SN74AS8834GB by Texas Instruments is a 64x40 memory circuit IC with 2560-bit memory density. Operating at 5V, it features synchronous mode and TTL technology. Ideal for commercial applications, this square-shaped IC has a grid array package style and operates b/w 0°C to 70°C.

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Other Memory ICs;

SN7489J by Texas Instruments is a 16x4 memory circuit IC with CMOS technology. It operates asynchronously at 5V, with open-collector output and a max access time of 60ns. Ideal for applications requiring parallel memory storage in commercial temperature environments.

Other Memory ICs;

SNC54LS170W by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL IC with 16 terminals and a supply voltage of 5V. Its ceramic package can operate b/w -55°C to 125°C, making it suitable for military-grade applications requiring reliable memory functions in harsh environments. This rectangular flatpack IC is surface mountable and ideal for use in rugged electronic systems where high temperature tolerance and durability are essential.

M36W108T100ZM6 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 1M x 8 organization with mixed FLASH+SRAM technology. It operates b/w -40 °C to 85°C and supports power supplies of 2.7V to 3.6V, ideal for industrial applications. With a max access time of 100 ns and compact design, it ensures efficient performance in various electronic devices.

M36LLR8860T1ZAQF by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates b/w -25 °C and 85 °C, making it ideal for compact electronic applications. With an 88-terminal grid array design, it ensures efficient space utilization in devices.