Maxim Integrated - MAX2240EBL+T

  1. Home
  2. Maxim Integrated - MAX2240EBL+T
MAX2240EBL+T by Maxim Integrated

Image shown is a representation only.

Manufacturer Maxim Integrated
Manufacturer's Part Number MAX2240EBL+T
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 9; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Terminal Finish: TIN SILVER COPPER;
Datasheet MAX2240EBL+T Datasheet
In Stock1,384
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
No. of Terminals: 9
Package Equivalence Code: BGA9,3X3,20
Maximum Operating Temperature: 85 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 155 mA
Terminal Finish: TIN SILVER COPPER
JESD-609 Code: e1
Minimum Operating Temperature: -40 Cel
Power Supplies (V): 3/5
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,384 - -

Popular Products

Category Top Products

HMC505LP4 by Hittite Microwave

HMC505LP4

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e0;
MSA-1105-STR by Agilent Technologies

MSA-1105-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 50 MHz;
HMC451LP3ETR by Analog Devices

HMC451LP3ETR

Analog Devices

HMC451LP3ETR by Analog Devices is a GAAS RF amplifier with 12.5 dB gain, operating from 5V supply at frequencies ranging from 5-18 GHz. With a max input power of 10 dBm, it's ideal for wideband low-power applications in RF and microwave systems requiring surface mount components.
HMC441LH5TR by Analog Devices

HMC441LH5TR

Analog Devices

Analog Devices' HMC441LH5TR is a GAAS RF amplifier with 12 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current draw of 115mA. Ideal for wideband medium-power applications, this surface-mount device offers reliable performance in RF and microwave systems.
NBB-310-T1 by Qorvo

NBB-310-T1

Qorvo

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.
ADL8106ACEZ-R7 by Analog Devices

ADL8106ACEZ-R7

Analog Devices

WIDE BAND LOW POWER;
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.
MGA-86576-STR by Hewlett Packard

MGA-86576-STR

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC465LP5E by Hittite Microwave

HMC465LP5E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
HMC1121LP6GE by Analog Devices

HMC1121LP6GE

Analog Devices

Analog Devices' HMC1121LP6GE is a wide band high power RF amplifier with 25 dB gain and 24 dBm max input power. Operating from 5500 MHz to 8500 MHz, it is ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. With a temperature range of -40°C to 85°C, it offers reliable performance in various environments.
HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.
MMZ09332BT1 by Freescale Semiconductor

MMZ09332BT1

Freescale Semiconductor

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;
QPM1000 by Qorvo

QPM1000

Qorvo

Qorvo's QPM1000 is a wide band low power RF amplifier with 17 dB gain, operating from 2-20 GHz. It can handle up to 33 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for applications requiring surface mount construction in RF & microwave systems.
TGA4803 by Triquint Semiconductor

TGA4803

Triquint Semiconductor

WIDE BAND MEDIUM POWER; JESD-609 Code: e3/e4; Maximum Operating Frequency: 50000 MHz; Gain: 8 dB; Construction: COMPONENT; Maximum Input Power (CW): 18 dBm;
AG302-86G by Wj Communications

AG302-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
MAAL-011141-000PPR by M/a-com Technology Solutions

MAAL-011141-000PPR

M/a-com Technology Solutions

MAAL-011141-000PPR by M/a-com Technology Solutions is a wide band low power RF amplifier with a gain of 17.5 dB. It has a max input power of 10 dBm and operates in temperatures ranging from -40 to 85 °C. This amplifier is suitable for applications requiring amplification in the RF and microwave frequency range up to 28 GHz.
MAR-3SM+ by Mini-circuits

MAR-3SM+

Mini-circuits

MAR-3SM+ by Mini-circuits is a wideband low power RF amplifier with 8 dB gain, suitable for frequencies ranging from 0 to 2000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, making it ideal for RF and microwave applications requiring high performance in temperature range -20 to 85°C.
ATF-50189 by Broadcom

ATF-50189

Broadcom

NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 2400 MHz; Construction: COAXIAL;
HMC816LP4ETR by Analog Devices

HMC816LP4ETR

Analog Devices

Analog Devices' HMC816LP4ETR is a GAAS technology RF amplifier with 2 functions, 24 terminals, and operates at temperatures from -40 to 85°C. It has a power supply of 5V and max supply current of 126mA. Ideal for wideband low-power RF or microwave applications due to its surface mount package body material made of plastic/epoxy.
QPA1011 by Qorvo

QPA1011

Qorvo

Qorvo's QPA1011 is a wide band high power RF amplifier with 28 dB gain and 30 dBm CW input power. Operating from 7900 to 11000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & microwave systems, with a temperature range of -40 to 85°C.