MAX3377EETD+ by Maxim Integrated | Interface ICs

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Manufacturer	Maxim Integrated
Manufacturer's Part Number	MAX3377EETD+
Description	Other Interface ICs; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 14; Package Code: SON; Package Shape: RECTANGULAR;
Datasheet	MAX3377EETD+ Datasheet
In Stock	914

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Sub-Category:	Other Interface ICs
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	14
Qualification:	Not Qualified
Package Equivalence Code:	SOLCC14,.12,16
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	BICMOS
JESD-30 Code:	R-PDSO-N14
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
Peak Reflow Temperature (C):	260
Package Code:	SON
Terminal Pitch:	.4 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	1.8/5
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
914	$2.410	$2,202.740

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;

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OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.