Image shown is a representation only.
| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | 2N6295 |
| Description | NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-30 Code: O-MBFM-P2; |
| Datasheet | 2N6295 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | 4 A |
| Configuration: | DARLINGTON WITH BUILT-IN RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| JEDEC-95 Code: | TO-66 |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 100 |
| Minimum Operating Temperature: | -65 Cel |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 50 W |
| Maximum Collector-Emitter Voltage: | 80 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-MBFM-P2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | PIN/PEG |
| Maximum Operating Temperature: | 200 Cel |
| Maximum Collector-Base Capacitance: | 120 pF |
| Case Connection: | COLLECTOR |
| Maximum VCEsat: | 3 V |
