Microsemi - TIP42C

  1. Home
  2. Microsemi - TIP42C
TIP42C by Microsemi

Image shown is a representation only.

Manufacturer Microsemi
Manufacturer's Part Number TIP42C
Description PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15; JEDEC-95 Code: TO-220; Package Body Material: PLASTIC/EPOXY;
Datasheet TIP42C Datasheet
In Stock2,445
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 6 A
Transistor Element Material: SILICON
JEDEC-95 Code: TO-220
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 15
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T2
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,445 - -

Popular Products

Category Top Products

TIP42A by General Transistor

TIP42A

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP127 by Baneasa S A

TIP127

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; JESD-30 Code: R-PSFM-T3;
MJE340 by Tt Electronics Plc

MJE340

Tt Electronics Plc

NPN; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
MJE340 by Motorola

MJE340

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
TIP122TU by Onsemi

TIP122TU

Onsemi

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.
2SC5200O by Unisonic Technologies

2SC5200O

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
TIP29C by Crimson Semiconductor

TIP29C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
TIP35C by Nte Electronics

TIP35C

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;
TIP41C by Microsemi

TIP41C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Terminal Finish: TIN LEAD; Package Body Material: PLASTIC/EPOXY;
TIP42C by Microsemi

TIP42C

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Minimum DC Current Gain (hFE): 15; JEDEC-95 Code: TO-220; Package Body Material: PLASTIC/EPOXY;
MJD127T4 by Onsemi

MJD127T4

Onsemi

MJD127T4 by Onsemi is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 100V, max collector current of 8A, and min DC current gain of 100. With a package style of small outline and surface mount capability, it offers high power dissipation up to 20W in a compact rectangular shape.
TIP47 by Central Semiconductor

TIP47

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP120 by Onsemi

TIP120

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
BDW93C by Mospec Semiconductor

BDW93C

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Minimum DC Current Gain (hFE): 100;
TIP142 by Continental Device India

TIP142

Continental Device India

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
TIP31C by Samsung

TIP31C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2N3055 by New Jersey Semiconductor Products

2N3055

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
TIP31C by Secos

TIP31C

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP120 by Inchange Semiconductor

TIP120

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
BUV48A by Mospec Semiconductor

BUV48A

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; Maximum Operating Temperature: 175 Cel;