Microchip Technology - APT20M11JVR

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APT20M11JVR by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APT20M11JVR
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .011 ohm;
Datasheet APT20M11JVR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 175 A
Maximum Pulsed Drain Current (IDM): 700 A
Surface Mount: NO
No. of Terminals: 4
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .011 ohm
Avalanche Energy Rating (EAS): 3600 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: HIGH VOLTAGE
Peak Reflow Temperature (C): NOT SPECIFIED
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