APTC60DAM18CTG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	APTC60DAM18CTG
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Drain Current (Abs) (ID): 143 A; Maximum Pulsed Drain Current (IDM): 572 A;
Datasheet	APTC60DAM18CTG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	143 A
Maximum Pulsed Drain Current (IDM):	572 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	12
Maximum Power Dissipation (Abs):	833 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X12
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.018 ohm
Avalanche Energy Rating (EAS):	1800 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Maximum Drain Current (Abs) (ID):	143 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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