APTM100A13SCG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	APTM100A13SCG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Maximum Pulsed Drain Current (IDM): 240 A; Package Body Material: UNSPECIFIED;
Datasheet	APTM100A13SCG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	65 A
Maximum Pulsed Drain Current (IDM):	240 A
Surface Mount:	NO
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	7
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.156 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	1300 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e1
Minimum DS Breakdown Voltage:	1000 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED

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