Microchip Technology - APTM50UM09FAG

APTM50UM09FAG by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number APTM50UM09FAG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5000 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
Datasheet APTM50UM09FAG Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 497 A
Maximum Pulsed Drain Current (IDM): 1988 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 2
Maximum Power Dissipation (Abs): 5000 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .01 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 3000 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 497 A
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products