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Manufacturer | Microchip Technology |
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Manufacturer's Part Number | APTM50UM09FAG |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 5000 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; |
Datasheet | APTM50UM09FAG Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 497 A |
Maximum Pulsed Drain Current (IDM): | 1988 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 5000 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PUFM-X2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .01 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 3000 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e1 |
Minimum DS Breakdown Voltage: | 500 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 497 A |