Microchip Technology - APTMC120AM12CT3AG

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APTMC120AM12CT3AG by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number APTMC120AM12CT3AG
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 925 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -40 Cel;
Datasheet APTMC120AM12CT3AG Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 220 A
Maximum Pulsed Drain Current (IDM): 440 A
Surface Mount: NO
No. of Terminals: 25
Maximum Power Dissipation (Abs): 925 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X25
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .012 ohm
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 1200 V
Maximum Drain Current (Abs) (ID): 220 A
Peak Reflow Temperature (C): NOT SPECIFIED
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