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Manufacturer | Microchip Technology |
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Manufacturer's Part Number | APTMC120AM12CT3AG |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 925 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -40 Cel; |
Datasheet | APTMC120AM12CT3AG Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON CARBIDE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 220 A |
Maximum Pulsed Drain Current (IDM): | 440 A |
Surface Mount: | NO |
No. of Terminals: | 25 |
Maximum Power Dissipation (Abs): | 925 W |
Terminal Position: | UPPER |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X25 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | .012 ohm |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Minimum DS Breakdown Voltage: | 1200 V |
Maximum Drain Current (Abs) (ID): | 220 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |