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| Manufacturer | Microchip Technology |
|---|---|
| Manufacturer's Part Number | IRF512 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 43 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 4.9 A; |
| Datasheet | IRF512 Datasheet |
| In Stock | 227 |
| NAME | DESCRIPTION |
|---|---|
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 4.9 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| JESD-609 Code: | e0 |
| Maximum Power Dissipation (Abs): | 43 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 4.9 A |









