Microchip Technology - JANTX2N5302

  1. Home
  2. Microchip Technology - JANTX2N5302
JANTX2N5302 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number JANTX2N5302
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: O-MBFM-P2; No. of Elements: 1;
Datasheet JANTX2N5302 Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Collector Current (IC): 30 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-204AA
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 5
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Qualification: Qualified
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Maximum Operating Temperature: 200 Cel
Reference Standard: MIL-19500/456D
Case Connection: COLLECTOR
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

D44H11G by Onsemi

D44H11G

Onsemi

D44H11G by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its high power dissipation of 50W and low min DC current gain (hFE) of 40.
TIP117 by Fairchild Semiconductor

TIP117

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified;
TIP120 by Semiconductors

TIP120

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
MJD122T4 by STMicroelectronics

MJD122T4

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A; Maximum Time At Peak Reflow Temperature (s): 30;
TIP35C by Comset Semiconductors

TIP35C

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BCX5316TA by Diodes Incorporated

BCX5316TA

Diodes Incorporated

BCX5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 100, and max IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.
BD243C by Samsung

BD243C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP142G by Onsemi

TIP142G

Onsemi

TIP142G by Onsemi is a NPN power BJT with 125W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 500 and can handle up to 10A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 100V, this transistor is suitable for high-power electronic circuits.
TIP36C by Tt Electronics Plc

TIP36C

Tt Electronics Plc

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Terminal Finish: Tin/Lead (Sn/Pb); JEDEC-95 Code: TO-247;
BD140 by Onsemi

BD140

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BDW93C by Crimson Semiconductor

BDW93C

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;
TIP147 by Central Semiconductor

TIP147

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Element Material: SILICON;
TIP29C by Onsemi

TIP29C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
MJE3055TG by Onsemi

MJE3055TG

Onsemi

MJE3055TG by Onsemi is a NPN BJT with max. power dissipation of 75W, max. collector-emitter voltage of 60V, and max. collector current of 10A. Ideal for switching applications due to its single configuration and flange mount package style.
BCP56-16 by Infineon Technologies

BCP56-16

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;
BD139 by Micro Commercial Components

BD139

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.25 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 25;
TIP35C by Continental Device India

TIP35C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP41C by Continental Device India

TIP41C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP32C by Solid State Devices

TIP32C

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP110 by Bourns

TIP110

Bourns

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;