MSCSM120AM03CT6LIAG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MSCSM120AM03CT6LIAG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 3215 W; No. of Elements: 2; JESD-30 Code: R-XUFM-X11;
Datasheet	MSCSM120AM03CT6LIAG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	805 A
Maximum Pulsed Drain Current (IDM):	1600 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	11
Minimum DS Breakdown Voltage:	1200 V
Maximum Power Dissipation (Abs):	3215 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X11
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	805 A
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.0031 ohm

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