Microchip Technology - MSCSM120DAM11CT3AG

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MSCSM120DAM11CT3AG by Microchip Technology

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Manufacturer Microchip Technology
Manufacturer's Part Number MSCSM120DAM11CT3AG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 1067 W; Terminal Position: UPPER; Maximum Operating Temperature: 175 Cel;
Datasheet MSCSM120DAM11CT3AG Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON CARBIDE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 254 A
Maximum Pulsed Drain Current (IDM): 500 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
No. of Terminals: 25
Minimum DS Breakdown Voltage: 1200 V
Maximum Power Dissipation (Abs): 1067 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X25
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (Abs) (ID): 254 A
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .0104 ohm
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