Microchip Technology - TP0606N3-G-P003

TP0606N3-G-P003 by Microchip Technology

Image shown is a representation only.

Manufacturer Microchip Technology
Manufacturer's Part Number TP0606N3-G-P003
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; Maximum Drain Current (ID): .32 A;
Datasheet TP0606N3-G-P003 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .32 A
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3.5 ohm
Maximum Feedback Capacitance (Crss): 35 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products