VN0106N3-G-P003 by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	VN0106N3-G-P003
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): .35 A;
Datasheet	VN0106N3-G-P003 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	8 pF
Maximum Drain Current (ID):	.35 A
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1 W
Maximum Drain-Source On Resistance:	3 ohm

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