Micron Technology - EDB1316BDBH-1DAAT-F-RTR

EDB1316BDBH-1DAAT-F-RTR by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number EDB1316BDBH-1DAAT-F-RTR
Description LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;
Datasheet EDB1316BDBH-1DAAT-F-RTR Datasheet
In Stock2,430
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 64MX16
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Seated Height: 1 mm
Access Mode: SINGLE BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
No. of Terminals: 134
No. of Words: 67108864 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B134
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 105 Cel
Package Code: VFBGA
Width: 10 mm
No. of Ports: 1
Memory Density: 1073741824 bit
Self Refresh: YES
Memory IC Type: LPDDR2 DRAM
Minimum Operating Temperature: -40 Cel
Memory Width: 16
No. of Functions: 1
Length: 11.5 mm
No. of Words Code: 64M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: SELF REFRESH
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Pitch: .65 mm
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 1.95 V
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