Micron Technology - EDB1332BDBH-1DIT-F-RTR

  1. Home
  2. Micron Technology - EDB1332BDBH-1DIT-F-RTR
EDB1332BDBH-1DIT-F-RTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number EDB1332BDBH-1DIT-F-RTR
Description LPDDR2 DRAM; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); JESD-609 Code: e1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet EDB1332BDBH-1DIT-F-RTR Datasheet
In Stock1,573
NAME DESCRIPTION
Other Names: EDB1332BDBH-1DIT-F-RTR
EDB1332BDBH-1DIT-F-R TR-ND
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Memory IC Type: LPDDR2 DRAM
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
JESD-609 Code: e1
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,573 - -

Popular Products

Category Top Products

MT46H128M16LFDD-48IT:C by Micron Technology

MT46H128M16LFDD-48IT:C

Micron Technology

Micron Technology's MT46H128M16LFDD-48IT:C is a 128MX16 LPDDR1 DRAM with 1.8V supply, operating at up to 208MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT48LC8M16A2TG-75:G by Micron Technology

MT48LC8M16A2TG-75:G

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 133MHz clock frequency. Ideal for commercial applications, it offers 4096 refresh cycles and supports sequential burst lengths of 1,2,4,8.
MT53D512M32D2DS-053WT:D by Micron Technology

MT53D512M32D2DS-053WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a clock frequency of 1869.1 MHz, single bank page burst access mode, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT47H64M16NF-25EIT:M by Micron Technology

MT47H64M16NF-25EIT:M

Micron Technology

MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
NT5TU128M8HE-ACI by Nanya Technology

NT5TU128M8HE-ACI

Nanya Technology

NT5TU128M8HE-ACI by Nanya Technology is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
W3H32M64E-533SBI by White Electronic Designs

W3H32M64E-533SBI

White Electronic Designs

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;
MT48LC16M16A2P-7EIT:DTR by Micron Technology

MT48LC16M16A2P-7EIT:DTR

Micron Technology

MT48LC16M16A2P-7EIT:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 268MB memory density. It operates at 3.3V, has a max access time of 5.4ns, and is ideal for industrial applications requiring fast and reliable memory performance.
AS4C256M16D3C-12BIN by Alliance Memory

AS4C256M16D3C-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BIN is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, operating at 1.5V. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type in a thin profile grid array package.
MT41K1G8RKB-107:PTR by Micron Technology

MT41K1G8RKB-107:PTR

Micron Technology

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT48LC8M16A2P-6A:L by Micron Technology

MT48LC8M16A2P-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for commercial applications requiring high-speed memory with low power consumption.
AS4C16M16SA-6TIN by Alliance Memory

AS4C16M16SA-6TIN

Alliance Memory

AS4C16M16SA-6TIN by Alliance Memory is a 16MX16 Synchronous DRAM with a clock frequency of 166 MHz. It operates at a voltage of 3.3V and has a temperature range of -40 to 85°C. This memory chip is commonly used in industrial applications requiring high-speed data storage and retrieval.
K4T51163QE-ZCE6 by Samsung

K4T51163QE-ZCE6

Samsung

Samsung's K4T51163QE-ZCE6 DDR2 DRAM features 32MX16 organization, 333 MHz clock frequency, and 536870912 bit memory density. Ideal for applications requiring high-speed data processing with a max operating temperature of 95°C.
MT41K256M16HA-125IT:ETR by Micron Technology

MT41K256M16HA-125IT:ETR

Micron Technology

Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
K4S641632D-TC80 by Samsung

K4S641632D-TC80

Samsung

Samsung's K4S641632D-TC80 is a 4MX16 DRAM with 125 MHz clock frequency, 70°C operating temp, and 3.3V supply. Ideal for commercial applications requiring fast memory access and low power consumption. Features include synchronous operation, self-refresh capability, and small outline package design.
W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.
MT40A256M16GE-075E:B by Micron Technology

MT40A256M16GE-075E:B

Micron Technology

Micron Technology's MT40A256M16GE-075E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in commercial-grade environments.
MT48LC16M16A2B4-6AAAT:G by Micron Technology

MT48LC16M16A2B4-6AAAT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAAT:G is a 16MX16 DRAM with 16777216 words, operating at 3.3V. It features synchronous operation, industrial temperature grade, and very thin profile package style. Ideal for applications requiring fast access time and high memory density in automotive electronics or industrial systems.
KVR1333D3S9/4G by Kingston Technology Company

KVR1333D3S9/4G

Kingston Technology Company

DRAMs;
NT5CC256M16EP-EK by Nanya Technology

NT5CC256M16EP-EK

Nanya Technology

NT5CC256M16EP-EK by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and low power consumption in a compact grid array package style.
W989D6DBGX6E by Winbond Electronics

W989D6DBGX6E

Winbond Electronics

W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.