Micron Technology - EDE1104AFSE-8E-F

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EDE1104AFSE-8E-F by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number EDE1104AFSE-8E-F
Description DDR2 DRAM; No. of Terminals: 60; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Sequential Burst Length: 4,8;
Datasheet EDE1104AFSE-8E-F Datasheet
In Stock230
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 256MX4
Output Characteristics: 3-STATE
Sub-Category: DRAMs
Surface Mount: YES
Maximum Supply Current: 290 mA
No. of Terminals: 60
Maximum Clock Frequency (fCLK): 400 MHz
No. of Words: 268435456 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B60
Package Shape: RECTANGULAR
Terminal Form: BALL
Package Code: FBGA
Input/Output Type: COMMON
Memory Density: 1073741824 bit
Sequential Burst Length: 4,8
Memory IC Type: DDR2 DRAM
Memory Width: 4
Qualification: Not Qualified
Package Equivalence Code: BGA60,9X11,32
Refresh Cycles: 8192
Interleaved Burst Length: 4,8
Maximum Access Time: .4 ns
No. of Words Code: 256M
Nominal Supply Voltage / Vsup (V): 1.8
Terminal Pitch: .8 mm
Power Supplies (V): 1.8
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Pricing (USD)

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