Micron Technology - EDJ5304AASE-AG-E

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EDJ5304AASE-AG-E by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number EDJ5304AASE-AG-E
Description DDR3 DRAM; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.575 V; No. of Words: 134217728 words;
Datasheet EDJ5304AASE-AG-E Datasheet
In Stock1,743
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 128MX4
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.425 V
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 78
No. of Words: 134217728 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
JESD-30 Code: R-PBGA-B78
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: BGA
No. of Ports: 1
Memory Density: 536870912 bit
Self Refresh: YES
Memory IC Type: DDR3 DRAM
JESD-609 Code: e1
Memory Width: 4
No. of Functions: 1
Qualification: Not Qualified
No. of Words Code: 128M
Nominal Supply Voltage / Vsup (V): 1.5
Additional Features: AUTO/SELF REFRESH
Maximum Supply Voltage (Vsup): 1.575 V
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