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| Manufacturer | Micron Technology |
|---|---|
| Manufacturer's Part Number | MT28C64432W18ABW-F70P85TWT |
| Description | MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 77; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M; |
| Datasheet | MT28C64432W18ABW-F70P85TWT Datasheet |
| In Stock | 497 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .000135 Amp |
| Organization: | 4MX16 |
| Maximum Seated Height: | 1.2 mm |
| Minimum Supply Voltage (Vsup): | 1.7 V |
| Sub-Category: | Other Memory ICs |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 77 |
| No. of Words: | 4194304 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B77 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | ASYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | TFBGA |
| Width: | 8 mm |
| Memory Density: | 67108864 bit |
| Mixed Memory Type: | FLASH+SRAM |
| Memory IC Type: | MEMORY CIRCUIT |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 16 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA77,8X10,32 |
| Length: | 10 mm |
| Maximum Access Time: | 85 ns |
| No. of Words Code: | 4M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Additional Features: | CELLULAR RAM IS ORGANIZED AS 2M X 16 |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 1.95 V |
| Power Supplies (V): | 1.8 |
