Micron Technology - MT41J256M8DA-93AAT:J

  1. Home
  2. Micron Technology - MT41J256M8DA-93AAT:J
MT41J256M8DA-93AAT:J by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT41J256M8DA-93AAT:J
Description DDR3 DRAM;
Datasheet MT41J256M8DA-93AAT:J Datasheet
In Stock1,517
NAME DESCRIPTION
Memory IC Type: DDR3 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,517 - -

Popular Products

Category Top Products

KVR16S11S8/4 by Kingston Technology Company

KVR16S11S8/4

Kingston Technology Company

Kingston's KVR16S11S8/4 DDR DRAM Module features 512MX64 organization, 1.5V nominal voltage, and operates synchronously. Ideal for applications requiring a memory width of 64 bits and a memory density of 34359738368 bits, such as servers or high-performance computing systems.
MT48LC4M32B2P-6A:L by Micron Technology

MT48LC4M32B2P-6A:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6A:L is a 4MX32 DRAM with 3.3V supply, operating in synchronous mode with self-refresh capability. It features a memory density of 134217728 bits and offers fast access time of 5.4 ns. Ideal for commercial applications requiring high-speed data processing in compact devices.
SQR-SD3I-8G1K6SNLB by Advantech

SQR-SD3I-8G1K6SNLB

Advantech

Advantech's SQR-SD3I-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and reliable performance in a wide temperature range from -40 to 85°C.
MT48LC8M16A2P-7E:L by Micron Technology

MT48LC8M16A2P-7E:L

Micron Technology

Micron Technology's MT48LC8M16A2P-7E:L is a 3.3V, 8MX16 Synchronous DRAM with self-refresh feature. Operating at 0-70°C, it offers 5.4ns access time and 134217728-bit memory density. Ideal for commercial applications requiring fast and reliable memory performance.
MT40A1G16KNR-075:ETR by Micron Technology

MT40A1G16KNR-075:ETR

Micron Technology

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
MT40A1G8WE-075EAIT:BTR by Micron Technology

MT40A1G8WE-075EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
MT48LC4M32B2P-6AIT:L by Micron Technology

MT48LC4M32B2P-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
K4T51163QI-HCE7 by Samsung

K4T51163QI-HCE7

Samsung

Samsung's K4T51163QI-HCE7 is a 32MX16 DDR2 DRAM with 84 terminals in a GRID ARRAY package. It operates at 400 MHz, has a memory density of 536870912 bit, and supports a max clock frequency of 0.4 ns. Ideal for applications requiring high-speed data processing and storage capabilities.
MT48LC16M16A2B4-6A:G by Micron Technology

MT48LC16M16A2B4-6A:G

Micron Technology

MT48LC16M16A2B4-6A:G by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a compact grid array package.
MT41K64M16TW-107IT:J by Micron Technology

MT41K64M16TW-107IT:J

Micron Technology

Micron Technology's MT41K64M16TW-107IT:J is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA of current. Ideal for applications requiring high-speed synchronous memory with a capacity of 1Gb.
MTA4ATF51264HZ-3G2R1 by Micron Technology

MTA4ATF51264HZ-3G2R1

Micron Technology

DDR4 DRAM MODULE;
IS42S32160D-7BLI-TR by Integrated Silicon Solution

IS42S32160D-7BLI-TR

Integrated Silicon Solution

IS42S32160D-7BLI-TR by Integrated Silicon Solution is a 16MX32 DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.
IS42S16400J-7TL by Integrated Silicon Solution

IS42S16400J-7TL

Integrated Silicon Solution

IS42S16400J-7TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4 ns and memory density of 67108864 bits in a small outline package.
MT48LC32M16A2P-75IT:CTR by Micron Technology

MT48LC32M16A2P-75IT:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.
MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
NT5CC128M16JR-EK by Nanya Technology

NT5CC128M16JR-EK

Nanya Technology

NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.
MT40A256M16LY-062E:F by Micron Technology

MT40A256M16LY-062E:F

Micron Technology

Micron Technology's MT40A256M16LY-062E:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT48LC16M16A2TG-75IT:DTR by Micron Technology

MT48LC16M16A2TG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.
MT47H128M16RT-25E:CTR by Micron Technology

MT47H128M16RT-25E:CTR

Micron Technology

Micron Technology's MT47H128M16RT-25E:CTR is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Suitable for applications requiring high memory density and fast access times in a compact package.
W971GG6NB25I by Winbond Electronics

W971GG6NB25I

Winbond Electronics

Winbond Electronics' W971GG6NB25I is a 64MX16 DDR2 DRAM with 67108864 words. It operates synchronously at up to 125 MHz, featuring a common I/O type and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.