Micron Technology - MT41K2G4THE-187E:E

  1. Home
  2. Micron Technology - MT41K2G4THE-187E:E
MT41K2G4THE-187E:E by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT41K2G4THE-187E:E
Description DDR3L DRAM;
Datasheet MT41K2G4THE-187E:E Datasheet
In Stock1,242
NAME DESCRIPTION
Memory IC Type: DDR3L DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,242 - -

Popular Products

Category Top Products

M378B5273CH0-CK0 by Samsung

M378B5273CH0-CK0

Samsung

Samsung's M378B5273CH0-CK0 DDR3 DRAM Module features 512MX64 organization, operates at 800 MHz, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT41K256M16TW-107XIT:P by Micron Technology

MT41K256M16TW-107XIT:P

Micron Technology

Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.
KM44C256BZ-8 by Samsung

KM44C256BZ-8

Samsung

Samsung's KM44C256BZ-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features a common I/O type, 3-state output characteristics, and fast page access mode. Ideal for commercial applications requiring high-speed memory with a memory density of 1048576 bits.
MT48LC32M16A2P-75IT:C by Micron Technology

MT48LC32M16A2P-75IT:C

Micron Technology

MT48LC32M16A2P-75IT:C by Micron Technology is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density in a small outline package.
IS43R16320D-6BL by Integrated Silicon Solution

IS43R16320D-6BL

Integrated Silicon Solution

IS43R16320D-6BL by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with a max clock frequency of 166 MHz. It operates synchronously and has a memory density of 536870912 bit. It is commonly used in applications requiring high-speed data storage and retrieval.
KM44C256AP-8 by Samsung

KM44C256AP-8

Samsung

Samsung's KM44C256AP-8 is a 256Kx4 DRAM with 80ns access time, operating at 5V. It features fast page access mode and 512 refresh cycles, suitable for commercial temperature grade applications. With a memory density of 1048576 bits, it offers common I/O type and through-hole terminal form.
KVR1333D3S9/4G by Kingston Technology Company

KVR1333D3S9/4G

Kingston Technology Company

DRAMs;
MT40A1G8WE-083EAUT:B by Micron Technology

MT40A1G8WE-083EAUT:B

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:B is a DDR4 DRAM with 1GX8 organization, operating at up to 1200 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O. The AEC-Q100 screening level makes it ideal for automotive and industrial environments.
MT53D1024M32D4DT-053AAT:D by Micron Technology

MT53D1024M32D4DT-053AAT:D

Micron Technology

Micron's MT53D1024M32D4DT-053AAT:D is a 1GX32 DDR4 DRAM with 32-bit memory width and 34359738368 bit density. It operates synchronously in grid array package style, suitable for high-performance computing applications.
EDW4032BABG-70-F-D by Micron Technology

EDW4032BABG-70-F-D

Micron Technology

Micron Technology's EDW4032BABG-70-F-D is a 128MX32 DRAM with 1.35V supply, synchronous operation, and self-refresh capability. It features a grid array package style suitable for applications requiring high memory density and multi-bank page burst access mode in thin profile designs.
EDB4432BBBJ-1D-F by Micron Technology

EDB4432BBBJ-1D-F

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile and fine pitch package style.
MT53D1024M32D4DT-053AIT:D by Micron Technology

MT53D1024M32D4DT-053AIT:D

Micron Technology

LPDDR4 DRAM;
MT8KTF51264AZ-1G9P1 by Micron Technology

MT8KTF51264AZ-1G9P1

Micron Technology

Micron Technology's MT8KTF51264AZ-1G9P1 is a 512MX64 DDR3 DRAM with 64-bit memory width. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package has 240 terminals and supports single bank page burst access mode.
S70KL1282DPBHI020 by Cypress Semiconductor

S70KL1282DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
MT47H64M16NF-25EAIT:M by Micron Technology

MT47H64M16NF-25EAIT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT40A1G16KH-062EAUT:E by Micron Technology

MT40A1G16KH-062EAUT:E

Micron Technology

Micron Technology's MT40A1G16KH-062EAUT:E is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT41K512M16VRP-107AAT:P by Micron Technology

MT41K512M16VRP-107AAT:P

Micron Technology

Micron Technology's MT41K512M16VRP-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for automotive applications due to AEC-Q100 screening and common I/O type.
MT53E2G32D4DT-046AAT:A by Micron Technology

MT53E2G32D4DT-046AAT:A

Micron Technology

LPDDR4 DRAM;
MT53D512M16D1DS-046AIT:D by Micron Technology

MT53D512M16D1DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M16D1DS-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
M366S1654ETS-C7A by Samsung

M366S1654ETS-C7A

Samsung

Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.