MT42L128M16D1LL-3IT:C by Micron Technology | Memory ICs

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Manufacturer	Micron Technology
Manufacturer's Part Number	MT42L128M16D1LL-3IT:C
Description	LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Refresh Cycles: 8192; Maximum Supply Current: 178 mA; Interleaved Burst Length: 4,8,16;
Datasheet	MT42L128M16D1LL-3IT:C Datasheet
In Stock	1,682

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.000025 Amp
Organization:	128MX16
Output Characteristics:	3-STATE
Sub-Category:	DRAMs
Surface Mount:	YES
Maximum Supply Current:	178 mA
No. of Terminals:	216
Maximum Clock Frequency (fCLK):	333 MHz
No. of Words:	134217728 words
Technology:	CMOS
Maximum Operating Temperature:	85 Cel
Input/Output Type:	COMMON
Memory Density:	2147483648 bit
Sequential Burst Length:	4,8,16
Memory IC Type:	LPDDR2 DRAM
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
Qualification:	Not Qualified
Package Equivalence Code:	BGA216,29X29,16
Refresh Cycles:	8192
Interleaved Burst Length:	4,8,16
Maximum Access Time:	5.5 ns
No. of Words Code:	128M
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	1.2,1.8

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,682	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Minimum Voltage Gain: 25000;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;