Micron Technology - MT42L256M32D2GVLL-3WT:A

  1. Home
  2. Micron Technology - MT42L256M32D2GVLL-3WT:A
MT42L256M32D2GVLL-3WT:A by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT42L256M32D2GVLL-3WT:A
Description LPDDR2 DRAM;
Datasheet MT42L256M32D2GVLL-3WT:A Datasheet
In Stock467
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
467 - -

Popular Products

Category Top Products

IS42S32800J-6TL by Integrated Silicon Solution

IS42S32800J-6TL

Integrated Silicon Solution

IS42S32800J-6TL by Integrated Silicon Solution is a 8MX32 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 86 terminals, and supports four bank page burst access mode. Ideal for applications requiring high-speed memory performance in commercial temperature environments.
MT40A1G8WE-083EAUT:BTR by Micron Technology

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.
K4B1G1646E-HCF8 by Samsung

K4B1G1646E-HCF8

Samsung

Samsung's K4B1G1646E-HCF8 DDR3 DRAM features 64MX16 organization, 533 MHz clock frequency, and 1073741824 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT40A256M16GE-083E:BTR by Micron Technology

MT40A256M16GE-083E:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083E:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like servers, PCs, and networking equipment.
W631GG6NB09I by Winbond Electronics

W631GG6NB09I

Winbond Electronics

Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
AS4C4M16SA-6BINTR by Alliance Memory

AS4C4M16SA-6BINTR

Alliance Memory

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.
KM41C4000BSLP-8 by Samsung

KM41C4000BSLP-8

Samsung

Samsung's KM41C4000BSLP-8 is a 4MX1 DRAM with 4194304-bit memory density. It operates asynchronously at 5V, featuring a max access time of 80ns and refresh cycles of 1024. Ideal for applications requiring fast page access in commercial temperature grades.
AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
MT40A1G8WE-083EAIT:BTR by Micron Technology

MT40A1G8WE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial environments.
MT48LC8M16A2TG-6A by Micron Technology

MT48LC8M16A2TG-6A

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 167 MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for applications requiring high-speed memory operations in commercial temperature environments.
MT53D512M32D2DS-053WT:D by Micron Technology

MT53D512M32D2DS-053WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a clock frequency of 1869.1 MHz, single bank page burst access mode, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT41K256M8DA-125AIT:K by Micron Technology

MT41K256M8DA-125AIT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AIT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for industrial applications requiring high-speed synchronous memory with self-refresh capabilities.
IS42S16400J-7TLI-TR by Integrated Silicon Solution

IS42S16400J-7TLI-TR

Integrated Silicon Solution

IS42S16400J-7TLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a small outline package suitable for industrial applications requiring fast access times and common I/O type.
MT40A256M16GE-083E:B by Micron Technology

MT40A256M16GE-083E:B

Micron Technology

Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
AS4C256M16D3C-12BIN by Alliance Memory

AS4C256M16D3C-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3C-12BIN is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, operating at 1.5V. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type in a thin profile grid array package.
MT41K256M8DA-125AAT:K by Micron Technology

MT41K256M8DA-125AAT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AAT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and is designed for automotive applications due to its AEC-Q100 screening level. The memory IC offers a memory density of 2147483648 bits and supports multi-bank page burst access mode.
M378T2863RZS-CE6 by Samsung

M378T2863RZS-CE6

Samsung

Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
IS46TR16256BL-125KBLA2 by Integrated Silicon Solution

IS46TR16256BL-125KBLA2

Integrated Silicon Solution

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution is a DDR3 DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 4294967296 bits. Ideal for industrial applications requiring multi-bank page burst access mode and a temperature range from -40 to 105°C.
MT47H32M16NF-25EAAT:H by Micron Technology

MT47H32M16NF-25EAAT:H

Micron Technology

Micron Technology's MT47H32M16NF-25EAAT:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, industrial temperature grade, and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive and industrial environments.
MT40A512M16JY-083EAIT:B by Micron Technology

MT40A512M16JY-083EAIT:B

Micron Technology

Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.