Micron Technology - MT46H256M32L4LE-48WT:CTR

  1. Home
  2. Micron Technology - MT46H256M32L4LE-48WT:CTR
MT46H256M32L4LE-48WT:CTR by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT46H256M32L4LE-48WT:CTR
Description LPDDR1 DRAM; Terminal Finish: TIN SILVER COPPER;
Datasheet MT46H256M32L4LE-48WT:CTR Datasheet
In Stock2,266
NAME DESCRIPTION
Memory IC Type: LPDDR1 DRAM
Terminal Finish: TIN SILVER COPPER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,266 - -

Popular Products

Category Top Products

MT41K1G8RKB-107:PTR by Micron Technology

MT41K1G8RKB-107:PTR

Micron Technology

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT48LC4M32B2F5-7IT:GTR by Micron Technology

MT48LC4M32B2F5-7IT:GTR

Micron Technology

Micron Technology's MT48LC4M32B2F5-7IT:GTR is a 3.3V, 4MX32 Synchronous DRAM with 85°C max temp. Ideal for industrial applications, it features self-refresh mode, very thin profile package style, and operates in synchronous mode with a memory width of 32 bits.
MT61M256M32JE-12AAT:A by Micron Technology

MT61M256M32JE-12AAT:A

Micron Technology

Micron Technology's MT61M256M32JE-12AAT:A is a GDDR6 DRAM with 256MX32 organization, operating at up to 1500 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for high-performance applications requiring fast memory access and data processing.
W631GG6NB09I by Winbond Electronics

W631GG6NB09I

Winbond Electronics

Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC32M16A2TG-75L:C by Micron Technology

MT48LC32M16A2TG-75L:C

Micron Technology

Micron Technology's MT48LC32M16A2TG-75L:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
S70KS1282GABHV020 by Cypress Semiconductor

S70KS1282GABHV020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Minimum Operating Temperature: -40 Cel;
IS42S32400F-7TLI by Integrated Silicon Solution

IS42S32400F-7TLI

Integrated Silicon Solution

IS42S32400F-7TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it features common I/O type, self-refresh mode, and supports four-bank page burst access mode.
W3H64M72E-533SBI by Microsemi

W3H64M72E-533SBI

Microsemi

The Microsemi W3H64M72E-533SBI DDR2 DRAM features 64MX72 organization, 267 MHz clock frequency, and 1.8V nominal voltage. Ideal for industrial applications requiring high memory density and fast access times in a synchronous operating mode.
W9812G6KH-6I by Winbond Electronics

W9812G6KH-6I

Winbond Electronics

The Winbond Electronics W9812G6KH-6I is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V, featuring a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
MT46H64M32LFMA-5IT:A by Micron Technology

MT46H64M32LFMA-5IT:A

Micron Technology

MT46H64M32LFMA-5IT:A by Micron Technology is a 64MX32 LPDDR1 DRAM with 67108864 words, 2147483648 bit memory density, and 32-bit memory width. Operating in industrial temperature range of -40 to 85 °C, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
MT41K128M16JT-125AUT:K by Micron Technology

MT41K128M16JT-125AUT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AUT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with thin profile and fine pitch terminals, suitable for multi-bank page burst access mode.
AS4C32M16SB-7TCN by Alliance Memory

AS4C32M16SB-7TCN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TCN is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85°C. Featuring self-refresh and four bank page burst access mode, it offers 33554432 words memory density for various commercial applications.
IS42S32400F-7TL by Integrated Silicon Solution

IS42S32400F-7TL

Integrated Silicon Solution

IS42S32400F-7TL by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at 143MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT41K256M16TW-107IT:P by Micron Technology

MT41K256M16TW-107IT:P

Micron Technology

Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
M378T2863RZS-CE6 by Samsung

M378T2863RZS-CE6

Samsung

Samsung M378T2863RZS-CE6 DDR DRAM Module features 128MX8 organization, operates at 333 MHz clock frequency, and has a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous operation with a common I/O type and self-refresh capability.
MT41K256M16HA-125:E by Micron Technology

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.
MT53E1G32D2FW-046AIT:B by Micron Technology

MT53E1G32D2FW-046AIT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AIT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features self-refresh capability and common I/O type, suitable for applications requiring high-speed synchronous memory with a thin profile and fine pitch package style.
EDB4432BBBJ-1DAIT-F-R by Micron Technology

EDB4432BBBJ-1DAIT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
MT40A512M8SA-075:F by Micron Technology

MT40A512M8SA-075:F

Micron Technology

Micron Technology's MT40A512M8SA-075:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for applications requiring high memory density and fast data access in a compact form factor.
IS42S16100C1-7TL by Integrated Silicon Solution

IS42S16100C1-7TL

Integrated Silicon Solution

IS42S16100C1-7TL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features dual bank page burst access mode and supports sequential burst lengths of 1,2,4,8. Ideal for applications requiring high-speed memory solutions in commercial temperature grade environments.