Micron Technology - MT47H128M8SH-25EIT:M

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MT47H128M8SH-25EIT:M by Micron Technology

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Manufacturer Micron Technology
Manufacturer's Part Number MT47H128M8SH-25EIT:M
Description DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
Datasheet MT47H128M8SH-25EIT:M Datasheet
In Stock1,422
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Sub-Category: DRAMs
Surface Mount: YES
Screening Level: AEC-Q100
Technology: CMOS
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Package Code: TFBGA
Input/Output Type: COMMON
No. of Ports: 1
Self Refresh: YES
Sequential Burst Length: 4,8
Memory Width: 8
Qualification: Not Qualified
Package Equivalence Code: BGA60,9X11,32
Additional Features: AUTO/SELF REFRESH
Peak Reflow Temperature (C): 260
Terminal Pitch: .8 mm
Maximum Standby Current: .01 Amp
Organization: 128MX8
Output Characteristics: 3-STATE
Maximum Seated Height: 1.2 mm
Maximum Supply Current: 210 mA
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 60
Maximum Clock Frequency (fCLK): 400 MHz
No. of Words: 134217728 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
JESD-30 Code: R-PBGA-B60
Maximum Operating Temperature: 95 Cel
Width: 8 mm
Memory Density: 1073741824 bit
Memory IC Type: DDR2 DRAM
JESD-609 Code: e1
Minimum Operating Temperature: -40 Cel
No. of Functions: 1
Refresh Cycles: 8192
Interleaved Burst Length: 4,8
Length: 10 mm
Maximum Access Time: .4 ns
No. of Words Code: 128M
Nominal Supply Voltage / Vsup (V): 1.8
Temperature Grade: INDUSTRIAL
Maximum Supply Voltage (Vsup): 1.9 V
Power Supplies (V): 1.8
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