Micron Technology - MT47H64M16HR-3L

  1. Home
  2. Micron Technology - MT47H64M16HR-3L
MT47H64M16HR-3L by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT47H64M16HR-3L
Description DDR2 DRAM; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet MT47H64M16HR-3L Datasheet
In Stock158
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Memory IC Type: DDR2 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
158 - -

Popular Products

Category Top Products

MT40A1G8WE-083EAUT:BTR by Micron Technology

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.
K4S641632H-UC75 by Samsung

K4S641632H-UC75

Samsung

Samsung's K4S641632H-UC75 is a 3.3V DRAM with 4MX16 organization, 133 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT48LC2M32B2P-6AIT:JTR by Micron Technology

MT48LC2M32B2P-6AIT:JTR

Micron Technology

Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.
S27KL0642GABHB020 by Infineon Technologies

S27KL0642GABHB020

Infineon Technologies

Infineon's S27KL0642GABHB020 DRAM offers 8MX8 organization, operates synchronously at up to 200 MHz, and features a self-refresh mode. Ideal for applications requiring high-speed memory access in automotive electronics, with AEC-Q100 screening level ensuring reliability in harsh environments.
KM41C256P-7 by Samsung

KM41C256P-7

Samsung

Samsung's KM41C256P-7 is a 256Kx1 DRAM with 262144-bit memory density. Operating at 5V, it offers a max access time of 70ns and features fast page access mode. Ideal for commercial applications requiring high-speed data storage in a compact IN-LINE package.
M471B2873FHS-CH9 by Samsung

M471B2873FHS-CH9

Samsung

Samsung's M471B2873FHS-CH9 DDR DRAM MODULE offers 128MX64 organization, 1.5V nominal voltage, and operates in synchronous mode. Ideal for applications requiring high memory density and fast access times with a temperature range of 0-95°C.
IS42S16160G-7BLI by Integrated Silicon Solution

IS42S16160G-7BLI

Integrated Silicon Solution

IS42S16160G-7BLI by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals in a GRID ARRAY package style, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high-speed memory performance.
IS43TR16256BL-125KBLI by Integrated Silicon Solution

IS43TR16256BL-125KBLI

Integrated Silicon Solution

IS43TR16256BL-125KBLI by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with a max clock frequency of 400 MHz. It operates in synchronous mode and has a self-refresh feature. It is commonly used in industrial applications requiring high memory density and fast data processing.
K4B4G0846B-HCK0 by Samsung

K4B4G0846B-HCK0

Samsung

Samsung's K4B4G0846B-HCK0 DDR3 DRAM features 512MX8 organization, 1.5V nominal voltage, and 4294967296 bit memory density. Ideal for applications requiring high-speed synchronous operation with self-refresh capability in a compact GRID ARRAY package.
W631GU6NB12I by Winbond Electronics

W631GU6NB12I

Winbond Electronics

W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
AS4C512M16D3L-12BCN by Alliance Memory

AS4C512M16D3L-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
MT48LC16M16A2P-6A by Micron Technology

MT48LC16M16A2P-6A

Micron Technology

MT48LC16M16A2P-6A by Micron Technology is a 16MX16 DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is used in commercial applications requiring synchronous memory ICs with a memory density of 268435456 bits.
MT53E1G32D2FW-046AUT:B by Micron Technology

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.
KVR16LS11/4 by Kingston Technology Company

KVR16LS11/4

Kingston Technology Company

Kingston's KVR16LS11/4 DDR DRAM MODULE features 512MX64 organization, 1.35V supply voltage, and 64-bit memory width. Ideal for applications requiring synchronous operation in microelectronic assemblies with a max operating temperature of 85°C.
MT40A256M16GE-083E:B by Micron Technology

MT40A256M16GE-083E:B

Micron Technology

Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
MT47H64M16HR-3IT:G by Micron Technology

MT47H64M16HR-3IT:G

Micron Technology

Micron Technology's MT47H64M16HR-3IT:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
W631GG6NB-09 by Winbond Electronics

W631GG6NB-09

Winbond Electronics

Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.
MT61K512M32KPA-16:B by Micron Technology

MT61K512M32KPA-16:B

Micron Technology

Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.
M393A2K43DB3-CWE by Samsung

M393A2K43DB3-CWE

Samsung

Samsung M393A2K43DB3-CWE DDR4 DRAM Module features 16GX8 organization, 1.2V supply voltage, and 137438953472-bit memory density. Ideal for high-performance computing applications requiring fast data access with dual bank page burst access mode.
IS42S32800J-6TLI by Integrated Silicon Solution

IS42S32800J-6TLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 86; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;