Micron Technology - MT52C9010EC25/883C

  1. Home
  2. Micron Technology - MT52C9010EC25/883C
MT52C9010EC25/883C by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT52C9010EC25/883C
Description Other Memory ICs;
Datasheet MT52C9010EC25/883C Datasheet
In Stock366
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
366 - -

Popular Products

Category Top Products

SNJ54AS870FH by Texas Instruments

SNJ54AS870FH

Texas Instruments

SNJ54AS870FH by Texas Instruments is a MILITARY-grade TTL IC with 28 terminals in a CHIP CARRIER package. Operating temperature range from -55 to 125 °C, suitable for harsh environments. Ideal for applications requiring high reliability and performance in military and aerospace industries.
TMS27PC32NE4 by Texas Instruments

TMS27PC32NE4

Texas Instruments

Other Memory ICs;
SMJ27C128-15J by Texas Instruments

SMJ27C128-15J

Texas Instruments

Other Memory ICs;
M36LLR8860M1ZAQ by STMicroelectronics

M36LLR8860M1ZAQ

STMicroelectronics

M36LLR8860M1ZAQ by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates b/w -25 °C and 85 °C, making it ideal for compact electronic applications. With 88 terminals in a fine-pitch grid array, it ensures efficient performance in space-constrained designs.
WSF512K16-39H2I by Microsemi

WSF512K16-39H2I

Microsemi

Microsemi's WSF512K16-39H2I is a 512Kx16 memory IC with CMOS technology. Operating at 5V, it has a temperature range of -40 to 85°C and a package style of grid array. With 524288 words and 8388608 bits, it is ideal for industrial applications requiring high memory density and asynchronous operation.
M36W108T120ZN5T by STMicroelectronics

M36W108T120ZN5T

STMicroelectronics

STMicroelectronics M36W108T120ZN5T is a 1MX8 memory IC with 1048576 words and 8388608 bit memory density. It operates in asynchronous mode, with a supply voltage range of 2.7V to 3.6V. This GRID ARRAY package has a very thin profile, suitable for applications requiring high memory capacity in compact spaces.
DLPR100DWC by Texas Instruments

DLPR100DWC

Texas Instruments

DLPR100DWC by Texas Instruments is a memory circuit IC with 2MX8 organization, 8-bit memory width, and 16777216 bit memory density. It operates at temperatures ranging from -40 to 85 °C and has a max standby current of 0.00005 Amp. Ideal for industrial applications requiring small outline package style and surface mount compatibility.
DS6207-3 by Analog Devices

DS6207-3

Analog Devices

DS6207-3 by Analog Devices is a CMOS Memory Circuit with 384-bit memory density. It operates b/w 0 °C to 70°C, suitable for commercial applications. The IC has 5 terminals in a special shape package, ideal for various memory circuit functions.
TMS2564-45JDL by Texas Instruments

TMS2564-45JDL

Texas Instruments

TMS2564-45JDL by Texas Instruments is an 8KX8 MOS memory IC with 65536 bit density and 450 ns access time. It features a 3-STATE output, operates b/w 0 to 70 °C, and has a DUAL terminal position. Ideal for applications requiring fast data retrieval in commercial temperature environments.
DS9093RA by Analog Devices

DS9093RA

Analog Devices

MEMORY CIRCUIT; Package Shape: UNSPECIFIED; Technology: CMOS; Terminal Position: UNSPECIFIED; Terminal Form: UNSPECIFIED; Terminal Finish: TIN LEAD;
DS9093RA+ by Analog Devices

DS9093RA+

Analog Devices

MEMORY CIRCUIT; Package Shape: UNSPECIFIED; Package Style (Meter): SPECIAL SHAPE; Technology: CMOS; JESD-609 Code: e3; Terminal Form: UNSPECIFIED;
DS1991L-F5+A1A by Analog Devices

DS1991L-F5+A1A

Analog Devices

MEMORY CIRCUIT;
TMS4023NC by Texas Instruments

TMS4023NC

Texas Instruments

TMS4023NC by Texas Instruments is a 1KX1 MOS memory IC with 1024-bit density and 32 refresh cycles. It features 3-STATE output characteristics, operates b/w -25 to 70 °C, and has a rectangular PLASTIC/EPOXY package. Commonly used in applications requiring high-speed data storage with a terminal pitch of 2.54 mm.
LC331632M-12 by Onsemi

LC331632M-12

Onsemi

LC331632M-12 by Onsemi is a 32KX16 CMOS memory IC with 524288 bit density. It operates at 5V, has a max access time of 120ns, and features a 3-STATE output. This small outline package with gull wing terminals is ideal for commercial applications requiring common I/O functionality.
TMS27C32-25NL by Texas Instruments

TMS27C32-25NL

Texas Instruments

Other Memory ICs;
DS28E80Q+UW by Analog Devices

DS28E80Q+UW

Analog Devices

MEMORY CIRCUIT;
MT29F4G01ADAGDWB-IT:GTR by Micron Technology

MT29F4G01ADAGDWB-IT:GTR

Micron Technology

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CC2544RHBT by Texas Instruments

CC2544RHBT

Texas Instruments

The Texas Instruments CC2544RHBT is a square chip carrier with a clock frequency of 2496 MHz, suitable for automotive applications. Operating temperature ranges from -40 to 125°C, with supply voltage ranging from 2V to 3.6V. Ideal for memory circuits requiring high-speed performance in compact designs.
S27KL0641DABHB020 by Infineon Technologies

S27KL0641DABHB020

Infineon Technologies

Infineon's S27KL0641DABHB020 is a 8MX8 MEMORY CIRCUIT with 67108864 bit Memory Density. It operates at 3V, -40 to 105 °C, and has AEC-Q100 Screening Level for INDUSTRIAL applications. The PLASTIC/EPOXY GRID ARRAY IC is SYNCHRONOUS with 24 terminals in a RECTANGULAR package style.
M36W108T100ZN5 by STMicroelectronics

M36W108T100ZN5

STMicroelectronics

M36W108T100ZN5 from STMicroelectronics is a mixed FLASH+SRAM memory IC with a 1MX8 organization, ideal for asynchronous applications. It operates b/w 2.7V and 3.6V, featuring a max access time of 100ns and a temp range of -20 °C to 85°C. Its compact design (9.8mm x 11.8mm) suits space-constrained devices.