Micron Technology - MT53E1536M64D8HJ-046WT:C

  1. Home
  2. Micron Technology - MT53E1536M64D8HJ-046WT:C
MT53E1536M64D8HJ-046WT:C by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT53E1536M64D8HJ-046WT:C
Description LPDDR4 DRAM;
Datasheet MT53E1536M64D8HJ-046WT:C Datasheet
In Stock401
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
401 $64.260 $25,768.260

Popular Products

Category Top Products

MT40A1G8WE-083EAUT:BTR by Micron Technology

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.
MT48LC16M16A2TG-75IT:DTR by Micron Technology

MT48LC16M16A2TG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.
MT46H32M16LFBF-6IT:CTR by Micron Technology

MT46H32M16LFBF-6IT:CTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:CTR is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT53E1G32D2FW-046IT:B by Micron Technology

MT53E1G32D2FW-046IT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046IT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.
MT41K256M16TW-107IT:PTR by Micron Technology

MT41K256M16TW-107IT:PTR

Micron Technology

MT41K256M16TW-107IT:PTR by Micron Technology is a 256MX16 DDR3L DRAM with a memory density of 4Gb. It operates at a nominal voltage of 1.35V and has an access time of 20ns. This memory module is suitable for applications requiring high-speed synchronous operation and low power consumption.
EDB4432BBBJ-1DAUT-F-D by Micron Technology

EDB4432BBBJ-1DAUT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-D is a PLASTIC/EPOXY DRAM with SYNCHRONOUS operating mode and SELF REFRESH capability. It has a memory density of 4294967296 bit and is commonly used in AUTOMOTIVE applications.
MT41K128M16HA-15E:D by Silicon360

MT41K128M16HA-15E:D

Silicon360

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST; JESD-30 Code: R-PBGA-B96;
MT46H64M32LFMA-5IT:A by Micron Technology

MT46H64M32LFMA-5IT:A

Micron Technology

MT46H64M32LFMA-5IT:A by Micron Technology is a 64MX32 LPDDR1 DRAM with 67108864 words, 2147483648 bit memory density, and 32-bit memory width. Operating in industrial temperature range of -40 to 85 °C, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
IS43LD32640B-18BLI-TR by Integrated Silicon Solution

IS43LD32640B-18BLI-TR

Integrated Silicon Solution

IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
AS4C512M16D3LC-12BCN by Alliance Memory

AS4C512M16D3LC-12BCN

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices like smartphones and tablets.
M378T2863QZS-CF7 by Samsung

M378T2863QZS-CF7

Samsung

Samsung M378T2863QZS-CF7 DDR DRAM Module has 128MX64 organization, operates at 400 MHz with 1.8V supply voltage. Ideal for high-speed data processing in computing applications due to its synchronous operation and 64 memory width.
IS42S32400F-6TLI by Integrated Silicon Solution

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.
IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
MT41J128M16JT-093:K by Micron Technology

MT41J128M16JT-093:K

Micron Technology

Micron Technology's MT41J128M16JT-093:K is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
KM48S8030AT-G10 by Samsung

KM48S8030AT-G10

Samsung

Samsung's KM48S8030AT-G10 is an 8MX8 Synchronous DRAM with 67108864-bit memory density. It operates at a max clock frequency of 100 MHz and has a small outline, thin profile package style. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT40A512M16LY-062EIT:E by Micron Technology

MT40A512M16LY-062EIT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
MT48LC8M16A2B4-6AIT:L by Micron Technology

MT48LC8M16A2B4-6AIT:L

Micron Technology

Micron Technology's MT48LC8M16A2B4-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh capability and offers a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current consumption.
D2164A-15 by Intel

D2164A-15

Intel

Intel's D2164A-15 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 150ns. Ideal for commercial applications requiring high-speed memory solutions.