Micron Technology - MT53E768M32D2ZW-046AAT:C

  1. Home
  2. Micron Technology - MT53E768M32D2ZW-046AAT:C
MT53E768M32D2ZW-046AAT:C by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT53E768M32D2ZW-046AAT:C
Description LPDDR4 DRAM;
Datasheet MT53E768M32D2ZW-046AAT:C Datasheet
In Stock663
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
663 $20.650 $13,690.950

Popular Products

Category Top Products

AS4C512M16D3LA-10BCNTR by Alliance Memory

AS4C512M16D3LA-10BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BCNTR is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from 0 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density in a compact form factor.
MT48LC4M32B2P-6IT:G by Micron Technology

MT48LC4M32B2P-6IT:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.
IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MTA8ATF2G64HZ-3G2F1 by Micron Technology

MTA8ATF2G64HZ-3G2F1

Micron Technology

DDR4 DRAM MODULE;
AS4C32M16SB-6TINTR by Alliance Memory

AS4C32M16SB-6TINTR

Alliance Memory

SYNCHRONOUS DRAM; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
MT40A256M16LY-075:F by Micron Technology

MT40A256M16LY-075:F

Micron Technology

Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT47H64M16NF-25E:MTR by Micron Technology

MT47H64M16NF-25E:MTR

Micron Technology

MT47H64M16NF-25E:MTR by Micron Technology is a 1.8V DDR2 DRAM with 64M words and 16-bit memory width. It operates synchronously, has self-refresh capability, and can withstand temperatures up to 85°C. It is commonly used in applications requiring high-speed data storage and retrieval, such as computer systems and networking devices.
MT41K512M8DA-107IT:P by Micron Technology

MT41K512M8DA-107IT:P

Micron Technology

MT41K512M8DA-107IT:P by Micron Technology is a DDR3L DRAM with 512Mx8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast access times in a compact form factor.
IS43TR16512BL-125KBLI by Integrated Silicon Solution

IS43TR16512BL-125KBLI

Integrated Silicon Solution

IS43TR16512BL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.
AS4C512M16D3LB-12BIN by Alliance Memory

AS4C512M16D3LB-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LB-12BIN is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
W3H32M64E-533SBI by Mercury Systems

W3H32M64E-533SBI

Mercury Systems

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 208; Package Code: BGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B208;
AS4C8M16SA-6TIN by Alliance Memory

AS4C8M16SA-6TIN

Alliance Memory

Alliance Memory's AS4C8M16SA-6TIN is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a fast access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring reliable synchronous memory with small outline package style.
NT5CC64M16GP-DII by Nanya Technology

NT5CC64M16GP-DII

Nanya Technology

NT5CC64M16GP-DII by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
IS42S16400J-7TL by Integrated Silicon Solution

IS42S16400J-7TL

Integrated Silicon Solution

IS42S16400J-7TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4 ns and memory density of 67108864 bits in a small outline package.
IS43TR16512S2DL-125KBLI by Integrated Silicon Solution

IS43TR16512S2DL-125KBLI

Integrated Silicon Solution

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT48LC8M16A2P-7EIT:G by Micron Technology

MT48LC8M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
MT46V16M16P-6TIT:F by Micron Technology

MT46V16M16P-6TIT:F

Micron Technology

Micron Technology's MT46V16M16P-6TIT:F is a DDR1 DRAM with 16MX16 organization, operating at 167 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT53E128M32D2DS-053AIT:A by Micron Technology

MT53E128M32D2DS-053AIT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AIT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and low standby voltage.
MT41K1G8TRF-125IT:E by Micron Technology

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.
D2164A-15 by Intel

D2164A-15

Intel

Intel's D2164A-15 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 150ns. Ideal for commercial applications requiring high-speed memory solutions.