Micron Technology - MT8LSFT3232RH-13E

  1. Home
  2. Micron Technology - MT8LSFT3232RH-13E
MT8LSFT3232RH-13E by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT8LSFT3232RH-13E
Description DRAMs;
Datasheet MT8LSFT3232RH-13E Datasheet
In Stock1,483
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,483 - -

Popular Products

Category Top Products

W3H32M64E-533SBI by Microsemi

W3H32M64E-533SBI

Microsemi

Microsemi's W3H32M64E-533SBI DDR2 DRAM features 32MX64 organization, 1.8V supply voltage, and operates synchronously. Ideal for industrial applications with a temperature range of -40 to 85°C, it offers self-refresh capability and a memory density of 2147483648 bits.
MT40A1G8SA-062E:E by Micron Technology

MT40A1G8SA-062E:E

Micron Technology

Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
MT41J256M16HA-125:E by Micron Technology

MT41J256M16HA-125:E

Micron Technology

Micron Technology's MT41J256M16HA-125:E is a DDR3 DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and synchronous operation mode. Ideal for applications requiring high-speed memory access in devices like servers and networking equipment.
MT41K128M16JT-125IT:KTR by Micron Technology

MT41K128M16JT-125IT:KTR

Micron Technology

Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT41J64M16JT-15EIT:G by Micron Technology

MT41J64M16JT-15EIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Suitable for applications requiring high-speed synchronous memory access in compact devices.
AS4C512M16D3LC-12BCNTR by Alliance Memory

AS4C512M16D3LC-12BCNTR

Alliance Memory

Alliance Memory's AS4C512M16D3LC-12BCNTR is a DDR3L DRAM with 512MX16 organization, operating at up to 800 MHz. Featuring common I/O type and self-refresh mode, it offers 8192 refresh cycles and supports multi-bank page burst access. Ideal for applications requiring high-speed synchronous memory with low power consumption.
NT5CC256M16EP-EKT by Nanya Technology

NT5CC256M16EP-EKT

Nanya Technology

NT5CC256M16EP-EKT by Nanya Technology is a DDR3L DRAM with 256MX16 organization and 4294967296 bit memory density. It operates at a voltage of 1.35V, has a temperature range of -40 to 95 °C, and is suitable for industrial applications.
MT48LC16M16A2P-7EIT:D by Micron Technology

MT48LC16M16A2P-7EIT:D

Micron Technology

Micron Technology's MT48LC16M16A2P-7EIT:D is a 16MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268MB and supports common I/O type with self-refresh capability.
MT41K256M16HA-125MAIT:E by Micron Technology

MT41K256M16HA-125MAIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
MT53D512M32D2DS-046WT:D by Micron Technology

MT53D512M32D2DS-046WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features single bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.
KVR16LS11/8 by Kingston Technology Company

KVR16LS11/8

Kingston Technology Company

Kingston KVR16LS11/8 is a 1.35V DDR DRAM module with 1GX64 organization, operating at up to 800MHz clock frequency. It features 204 terminals in a rectangular package suitable for microelectronic assembly. Ideal for applications requiring high memory density and fast data access within the temperature range of 0-85°C.
SQR-SD3M-8G1K6SNLB by Advantech

SQR-SD3M-8G1K6SNLB

Advantech

Advantech's SQR-SD3M-8G1K6SNLB DDR3L DRAM Module features 8GX1 organization, 204 terminals, and operates at 1.35V. Ideal for applications requiring high memory density and synchronous operation in a compact MICROELECTRONIC ASSEMBLY package.
W66CP2NQUAFJ by Winbond Electronics

W66CP2NQUAFJ

Winbond Electronics

Winbond Electronics' W66CP2NQUAFJ is a 128MX32 LPDDR4 DRAM with 134,217,728 words and 4294967296 bit memory density. Operating at up to 1600 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.
IS42S32400F-6TLI by Integrated Silicon Solution

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.
MT46V32M16P-5B:FTR by Micron Technology

MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.
K4D263238I-UC50 by Samsung

K4D263238I-UC50

Samsung

Samsung's K4D263238I-UC50 is a 4MX32 GDDR1 DRAM with 200 MHz clock frequency. Operating at 2.5V, it offers 3-state output and supports synchronous mode for common I/O applications. With a compact flatpack design, it suits commercial-grade systems requiring fast memory access and low standby current consumption.
AS4C256M16D3A-12BIN by Alliance Memory

AS4C256M16D3A-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
MT40A256M16GE-083E:B by Micron Technology

MT40A256M16GE-083E:B

Micron Technology

Micron Technology's MT40A256M16GE-083E:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed data processing applications in electronics.
S27KS0642GABHV023 by Infineon Technologies

S27KS0642GABHV023

Infineon Technologies

S27KS0642GABHV023 by Infineon Technologies is a 8MX8 DRAM with 67108864 bit memory density. It operates at 200 MHz clock frequency, featuring synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile package style.
MT48LC8M16A2TG-6A:L by Micron Technology

MT48LC8M16A2TG-6A:L

Micron Technology

Micron Technology's MT48LC8M16A2TG-6A:L is a 8MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density.