Micron Technology - MTA18ASF1G72PDZ-3G2XX

  1. Home
  2. Micron Technology - MTA18ASF1G72PDZ-3G2XX
MTA18ASF1G72PDZ-3G2XX by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA18ASF1G72PDZ-3G2XX
Description DDR4 DRAM MODULE;
Datasheet MTA18ASF1G72PDZ-3G2XX Datasheet
In Stock733
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
733 - -

Popular Products

Category Top Products

KM416C1000AJ-6 by Samsung

KM416C1000AJ-6

Samsung

Samsung KM416C1000AJ-6 is a 1MX16 DRAM with 1048576 words, 16-bit memory width, and 60ns access time. It operates at 5V with a max standby current of 0.001A, suitable for fast page applications in commercial temperature grades.
K4S281632K-UC75 by Samsung

K4S281632K-UC75

Samsung

Samsung's K4S281632K-UC75 is a 8MX16 DRAM with 133 MHz clock frequency, suitable for commercial applications. Features include 3.3V supply voltage, 70°C operating temperature, and 4096 refresh cycles. Ideal for systems requiring high-speed synchronous memory with low power consumption.
IS42S32400F-7TLI by Integrated Silicon Solution

IS42S32400F-7TLI

Integrated Silicon Solution

IS42S32400F-7TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it features common I/O type, self-refresh mode, and supports four-bank page burst access mode.
MT46H64M16LFBF-5IT:B by Micron Technology

MT46H64M16LFBF-5IT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5IT:B is a DDR1 DRAM with 64MX16 organization, operating at 200 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for industrial applications requiring fast memory access and low power consumption.
M471B5273CH0-CH9 by Samsung

M471B5273CH0-CH9

Samsung

Samsung M471B5273CH0-CH9 DDR DRAM Module features 256MX8 organization, operates at 667 MHz with 1.5V supply voltage. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
HY57V281620HCLT-HI by Sk Hynix

HY57V281620HCLT-HI

Sk Hynix

SK Hynix's HY57V281620HCLT-HI is an 8MX16 DRAM with 133 MHz clock frequency, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 134217728 bits and features synchronous operation with self-refresh capability.
MT53D512M16D1DS-046AIT:D by Micron Technology

MT53D512M16D1DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M16D1DS-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A1G16RC-062EIT:B by Micron Technology

MT40A1G16RC-062EIT:B

Micron Technology

Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT41K256M16HA-125IT by Micron Technology

MT41K256M16HA-125IT

Micron Technology

Micron Technology's MT41K256M16HA-125IT is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
MT40A1G8SA-062EAIT:E by Micron Technology

MT40A1G8SA-062EAIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EAIT:E is a DDR4 DRAM with 1.2V supply, operating at up to 1600MHz clock frequency. It features 1GX8 organization, 1073741824 words capacity, and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type in automotive electronics or industrial systems.
MB814400A-70PZ by Fujitsu Semiconductor America

MB814400A-70PZ

Fujitsu Semiconductor America

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: ZIP; Refresh Cycles: 1024; Package Shape: RECTANGULAR;
S70KL1282DPBHI020 by Cypress Semiconductor

S70KL1282DPBHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 166 MHz; Technology: CMOS;
MT48LC4M16A2P-6AAIT:J by Micron Technology

MT48LC4M16A2P-6AAIT:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6AAIT:J is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, 5.5ns access time, and industrial temperature grade suitable for memory-intensive applications like networking equipment and industrial automation systems.
MT61K256M32JE-21:T by Micron Technology

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.
MT53E128M32D2DS-053AIT:A by Micron Technology

MT53E128M32D2DS-053AIT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AIT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and low standby voltage.
M378A5143DB0-CPB by Samsung

M378A5143DB0-CPB

Samsung

Samsung M378A5143DB0-CPB is a 512MX64 DDR DRAM MODULE with 1066 MHz clock frequency. Operating at 1.2V, it offers 64-bit memory width and 34359738368 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
S27KS0642GABHV020 by Infineon Technologies

S27KS0642GABHV020

Infineon Technologies

S27KS0642GABHV020 by Infineon Technologies is a 8MX8 DRAM with synchronous operation, self-refresh capability, and 200 MHz clock frequency. It is ideal for applications requiring high-speed memory access in compact devices due to its very thin profile package style and common I/O type.
MT48LC4M32B2TG-7IT:GTR by Micron Technology

MT48LC4M32B2TG-7IT:GTR

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:GTR is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access time and high memory density in a compact small outline package.
EDB4432BBBJ-1D-F-R by Micron Technology

EDB4432BBBJ-1D-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F-R is a 128MX32 LPDDR2 DRAM with 134 terminals in a grid array package. Operating at 1.2V, it offers synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications. The very thin profile and fine pitch make it suitable for compact electronic devices requiring fast and efficient data processing.
KM44C1000BJ-7 by Samsung

KM44C1000BJ-7

Samsung

Samsung's KM44C1000BJ-7 is a 1MX4 DRAM with 1048576 words and 70ns access time. It operates at 5V, has 3-STATE output, and uses FAST PAGE technology. Ideal for commercial applications requiring high memory density and fast data access.