Micron Technology - MTA72ASS16G72LZ-3G2B1

  1. Home
  2. Micron Technology - MTA72ASS16G72LZ-3G2B1
MTA72ASS16G72LZ-3G2B1 by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA72ASS16G72LZ-3G2B1
Description DDR4 DRAM MODULE;
Datasheet MTA72ASS16G72LZ-3G2B1 Datasheet
In Stock2,281
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,281 - -

Popular Products

Category Top Products

K4T51163QI-HCE7 by Samsung

K4T51163QI-HCE7

Samsung

Samsung's K4T51163QI-HCE7 is a 32MX16 DDR2 DRAM with 84 terminals in a GRID ARRAY package. It operates at 400 MHz, has a memory density of 536870912 bit, and supports a max clock frequency of 0.4 ns. Ideal for applications requiring high-speed data processing and storage capabilities.
MT48LC8M16A2B4-6AIT:L by Micron Technology

MT48LC8M16A2B4-6AIT:L

Micron Technology

Micron Technology's MT48LC8M16A2B4-6AIT:L is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh capability and offers a memory density of 134217728 bits. Ideal for industrial applications requiring fast access times and low standby current consumption.
MT46H32M16LFBF-5AIT:C by Micron Technology

MT46H32M16LFBF-5AIT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-5AIT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. Operating at 200 MHz, it features a very thin profile package style and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.
MT53E1G32D2FW-046IT:B by Micron Technology

MT53E1G32D2FW-046IT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046IT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.
NT5CC128M16JR-EK by Nanya Technology

NT5CC128M16JR-EK

Nanya Technology

NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.
IS42S16160J-7TL by Integrated Silicon Solution

IS42S16160J-7TL

Integrated Silicon Solution

IS42S16160J-7TL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 3.3V, has a memory density of 268435456 bit, and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
AS4C8M16SA-6TIN by Alliance Memory

AS4C8M16SA-6TIN

Alliance Memory

Alliance Memory's AS4C8M16SA-6TIN is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a fast access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring reliable synchronous memory with small outline package style.
AS4C512M16D3L-12BIN by Alliance Memory

AS4C512M16D3L-12BIN

Alliance Memory

Alliance Memory's AS4C512M16D3L-12BIN is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, operating at 1.35V. It features multi-bank page burst access mode and offers 8192 refresh cycles. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
MT41K1G8TRF-125:E by Micron Technology

MT41K1G8TRF-125:E

Micron Technology

MT41K1G8TRF-125:E by Micron Technology is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 243 mA of current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
M378T5663QZ3-CF7 by Samsung

M378T5663QZ3-CF7

Samsung

Samsung M378T5663QZ3-CF7 is a 256MX64 DDR DRAM MODULE with 400 MHz clock frequency. Operating at 1.8V, it offers 8192 refresh cycles and has a memory width of 64 bits. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
MT47H32M16NF-25EIT:HTR by Micron Technology

MT47H32M16NF-25EIT:HTR

Micron Technology

Micron Technology's MT47H32M16NF-25EIT:HTR is a DDR2 DRAM with 32MX16 organization and 33554432 words. It operates synchronously at a voltage of 1.8V, has a temperature range of -40 to 85°C, and is suitable for industrial applications.
MT48LC4M32B2B5-6A:LTR by Micron Technology

MT48LC4M32B2B5-6A:LTR

Micron Technology

Micron Technology's MT48LC4M32B2B5-6A:LTR is a 4MX32 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. It features common I/O type and self-refresh mode, suitable for applications requiring fast memory access and low power consumption.
MT41K512M8DA-107:P by Micron Technology

MT41K512M8DA-107:P

Micron Technology

Micron Technology's MT41K512M8DA-107:P is a DDR3L DRAM with 512MX8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package has 78 terminals in a grid array shape, suitable for applications requiring high memory density and low power consumption.
MT40A512M16LY-062EAIT:E by Micron Technology

MT40A512M16LY-062EAIT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1600 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.
K4S641632H-TC60 by Samsung

K4S641632H-TC60

Samsung

Samsung's K4S641632H-TC60 is a 4MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for commercial applications, it offers synchronous operation, self-refresh capability, and a small outline package design.
MT40A256M16GE-083EAIT:BTR by Micron Technology

MT40A256M16GE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT48LC8M16A2P-6AAAT:LTR by Micron Technology

MT48LC8M16A2P-6AAAT:LTR

Micron Technology

SYNCHRONOUS DRAM; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
W9812G6KH-5I by Winbond Electronics

W9812G6KH-5I

Winbond Electronics

W9812G6KH-5I by Winbond Electronics is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V and has a max access time of 4.5ns. Ideal for industrial applications requiring fast and reliable memory performance in compact spaces.
MT46V16M16P-5BIT:K by Micron Technology

MT46V16M16P-5BIT:K

Micron Technology

Micron Technology's MT46V16M16P-5BIT:K is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT48LC16M16A2B4-6AAAT:G by Micron Technology

MT48LC16M16A2B4-6AAAT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-6AAAT:G is a 16MX16 DRAM with 16777216 words, operating at 3.3V. It features synchronous operation, industrial temperature grade, and very thin profile package style. Ideal for applications requiring fast access time and high memory density in automotive electronics or industrial systems.