Micron Technology - MTA9ADF2G72AZ-3G2XX

  1. Home
  2. Micron Technology - MTA9ADF2G72AZ-3G2XX
MTA9ADF2G72AZ-3G2XX by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA9ADF2G72AZ-3G2XX
Description DDR4 DRAM;
Datasheet MTA9ADF2G72AZ-3G2XX Datasheet
In Stock2,476
NAME DESCRIPTION
Memory IC Type: DDR4 DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,476 - -

Popular Products

Category Top Products

M12L64164A-5BIG2Y by Elite Semiconductor Microelectronics Technologyinc

M12L64164A-5BIG2Y

Elite Semiconductor Microelectronics Technologyinc

Elite Semiconductor Microelectronics Technologyinc's M12L64164A-5BIG2Y is a 4MX16 Synchronous DRAM with 67108864 bit memory density. Operating at 3.3V, it offers a max access time of 5ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.
NT5CC256M16CP-DI by Nanya Technology

NT5CC256M16CP-DI

Nanya Technology

NT5CC256M16CP-DI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact devices.
HY57V281620HCLT-HI by Sk Hynix

HY57V281620HCLT-HI

Sk Hynix

SK Hynix's HY57V281620HCLT-HI is an 8MX16 DRAM with 133 MHz clock frequency, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 134217728 bits and features synchronous operation with self-refresh capability.
K4S281632I-UC60 by Samsung

K4S281632I-UC60

Samsung

Samsung's K4S281632I-UC60 is a 3.3V DRAM with 8MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.
MT48LC4M32B2P-6AIT:L by Micron Technology

MT48LC4M32B2P-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
MT53E128M32D2DS-053AUT:A by Micron Technology

MT53E128M32D2DS-053AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.
K4S561632J-UC75T by Samsung

K4S561632J-UC75T

Samsung

Samsung's K4S561632J-UC75T is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. It features common I/O type, self-refresh mode, and supports four-bank page burst access. Ideal for applications requiring high-speed memory performance in compact electronic devices.
K4S643232H-UC60 by Samsung

K4S643232H-UC60

Samsung

Samsung's K4S643232H-UC60 is a 2MX32 DRAM with 86 terminals, operating at 166 MHz. It features a small outline package and thin profile, suitable for applications requiring high memory density and fast access times up to 5.5 ns. Ideal for commercial-grade devices needing synchronous memory technology.
MT46H64M32LFBQ-48AIT:C by Micron Technology

MT46H64M32LFBQ-48AIT:C

Micron Technology

Micron Technology's MT46H64M32LFBQ-48AIT:C is a 64MX32 LPDDR1 DRAM with 67108864 words. It operates at 208 MHz, has a memory width of 32 bits, and supports a max clock frequency of 208 MHz. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
IS42S16800F-7TL by Integrated Silicon Solution

IS42S16800F-7TL

Integrated Silicon Solution

IS42S16800F-7TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 143 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT40A2G8SA-062E:F by Micron Technology

MT40A2G8SA-062E:F

Micron Technology

Micron Technology's MT40A2G8SA-062E:F is a DDR4 DRAM with 2GX8 organization, operating at up to 1600 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O.
K4A8G165WB-BCRC by Samsung

K4A8G165WB-BCRC

Samsung

Samsung's K4A8G165WB-BCRC is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT53D1024M32D4DT-046AUT:D by Micron Technology

MT53D1024M32D4DT-046AUT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AUT:D is a LPDDR4 DRAM with 1GX32 organization, operating at up to 2136.7 MHz clock frequency. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory in automotive electronics.
IS42S16400J-6TL by Integrated Silicon Solution

IS42S16400J-6TL

Integrated Silicon Solution

IS42S16400J-6TL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports common I/O type. Ideal for commercial applications requiring fast memory access and high data density in a compact form factor.
M393B1K70DH0-YH9 by Samsung

M393B1K70DH0-YH9

Samsung

Samsung M393B1K70DH0-YH9 DDR DRAM Module features 1.35V supply, 667MHz clock frequency, and 72 memory width. Ideal for high-performance computing applications with a max operating temperature of 85°C and self-refresh capability.
MT48LC8M16A2P-7EIT:G by Micron Technology

MT48LC8M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
MT41K512M16HA-125:A by Micron Technology

MT41K512M16HA-125:A

Micron Technology

Micron Technology's MT41K512M16HA-125:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact grid array package.
KVR16LN11/8 by Kingston Technology Company

KVR16LN11/8

Kingston Technology Company

Kingston KVR16LN11/8 DDR DRAM Module features 1Gx64 organization, operates synchronously at 1.35V, and has a memory width of 64 bits. Ideal for applications requiring high-speed data processing in microelectronic assemblies with a max operating temperature of 85°C.
MT48LC8M16A2TG-75IT:GTR by Micron Technology

MT48LC8M16A2TG-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR

Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.