Micron Technology - PRN256M8V79DG8GQF-15E

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3; Maximum Access Time: 35 ns;

DRAMs;

Alliance Memory's AS4C4M16SA-6TINTR is a 3.3V, 4MX16 Synchronous DRAM with 85°C max temp. Ideal for industrial applications, it features self-refresh mode, 5.4ns access time, and thin profile grid array package.

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

Winbond Electronics' W971GG6NB25I is a 64MX16 DDR2 DRAM with 67108864 words. It operates synchronously at up to 125 MHz, featuring a common I/O type and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.

Micron Technology's EDB4432BBBJ-1DAAT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.

Micron Technology's MT53E512M32D1ZW-046AAT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

AS4C4M16SA-6BINTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temperature grade, and thin profile grid array package suitable for various memory-intensive applications.

IS42S32400F-6TL by Integrated Silicon Solution is a 4MX32 SDRAM with 3.3V supply, operating at 166MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.

Samsung's K4S281632K-UC60 is a 8MX16 DRAM with 200 MHz clock frequency. It operates synchronously at 3.3V, featuring 70°C max temp. Ideal for applications requiring high-speed memory access and low power consumption.

Micron Technology's MT48LC2M32B2P-6AIT:JTR is a 3.3V, 2MX32 Synchronous DRAM with 5.4ns access time. Ideal for industrial applications, it features self-refresh mode and operates at temperatures ranging from -40 to 85°C. The memory density is 67108864 bits with a memory width of 32 bits.

Micron Technology's MT41K64M16TW-107IT:J is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA of current. Ideal for applications requiring high-speed synchronous memory with a capacity of 1Gb.

Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE; Surface Mount: YES;

IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.

MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.

Samsung's K4B2G1646C-HCH9 DDR3 DRAM features 128MX16 organization, 667 MHz clock frequency, and 1.5V supply voltage. Ideal for high-performance computing applications due to its fast access time and large memory density of 2147483648 bits.

Micron Technology's MT47H64M16NF-25EAAT:M is a DDR2 DRAM with 64MX16 organization, operating at a max clock frequency of 400 MHz. It has a memory density of 1,073,741,824 bits and is commonly used in applications requiring high-speed synchronous memory.