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| Manufacturer | Microsemi |
|---|---|
| Manufacturer's Part Number | UM6606A |
| Description | PIN DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND; |
| Datasheet | UM6606A Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Diode Resistive Test Frequency: | 100 MHz |
| Config: | SINGLE |
| Diode Type: | PIN DIODE |
| Frequency Band: | ULTRA HIGH FREQUENCY |
| Diode Resistive Test Current: | 100 mA |
| Sub-Category: | PIN Diodes |
| Surface Mount: | YES |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 2 |
| Terminal Position: | END |
| Maximum Diode Capacitance: | .4 pF |
| Package Style (Meter): | MICROWAVE |
| Technology: | POSITIVE-INTRINSIC-NEGATIVE |
| JESD-30 Code: | O-XEMW-N2 |
| Minimum Breakdown Voltage: | 600 V |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Diode Forward Resistance: | 2.5 ohm |
| Nominal Minority Carrier Lifetime: | 1 us |
| Reverse Test Voltage: | 100 V |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | -65 Cel |
| Nominal Diode Capacitance: | .4 pF |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | 6 W |
| Application: | ATTENUATOR; SWITCHING |
