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Manufacturer | Motorola |
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Manufacturer's Part Number | MTD3055V1 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; |
Datasheet | MTD3055V1 Datasheet |
In Stock | 2,176 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 12 A |
Maximum Pulsed Drain Current (IDM): | 37 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | YES |
Terminal Finish: | Tin/Lead (Sn/Pb) |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 48 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .15 ohm |
Avalanche Energy Rating (EAS): | 72 mJ |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e0 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 12 A |