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| Manufacturer | Nec Compound Semiconductor Devices |
|---|---|
| Manufacturer's Part Number | NE3210S01 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Transistor Element Material: GALLIUM ARSENIDE; Peak Reflow Temperature (C): NOT SPECIFIED; |
| Datasheet | NE3210S01 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 12 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | HETERO-JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .015 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 3 V |
| Qualification: | Not Qualified |
| Terminal Position: | UNSPECIFIED |
| Package Style (Meter): | MICROWAVE |
| JESD-30 Code: | X-PXMW-G4 |
| No. of Elements: | 1 |
| Package Shape: | UNSPECIFIED |
| Terminal Form: | GULL WING |
| Operating Mode: | DEPLETION MODE |
| Highest Frequency Band: | KU BAND |
| Case Connection: | SOURCE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
