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Manufacturer | Nec Electronics |
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Manufacturer's Part Number | NE3515S02-T1C-A |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): MICROWAVE; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON; |
Datasheet | NE3515S02-T1C-A Datasheet |
NAME | DESCRIPTION |
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Minimum Power Gain (Gp): | 11 dB |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | HETERO-JUNCTION |
Transistor Application: | AMPLIFIER |
Maximum Drain Current (ID): | .025 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | TIN BISMUTH |
JESD-609 Code: | e6 |
No. of Terminals: | 4 |
Minimum DS Breakdown Voltage: | 4 V |
Qualification: | Not Qualified |
Terminal Position: | UNSPECIFIED |
Package Style (Meter): | MICROWAVE |
JESD-30 Code: | R-PXMW-F4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | KU BAND |
Case Connection: | SOURCE |