Nexperia - 934070271147

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934070271147 by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number 934070271147
Description Power Bipolar Transistors;
Datasheet 934070271147 Datasheet
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TIP111 by Texas Instruments

TIP111

Texas Instruments

TIP111 by Texas Instruments is a NPN Darlington BJT with max power dissipation of 50W. It has min hFE of 500 and max VCE of 80V, ideal for high-power applications in flange mount packages. Suitable for switching and amplification tasks due to its silicon transistor element material and single terminal position.
ULN2004AN by Texas Instruments

ULN2004AN

Texas Instruments

ULN2004AN by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon transistor element material.
BD140 by STMicroelectronics

BD140

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MJE3055T by Inchange Semiconductor

MJE3055T

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP127 by Power Innovations

TIP127

Power Innovations

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Case Connection: COLLECTOR; Terminal Position: SINGLE;
TIP31C by Semiconductors

TIP31C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP120 by Continental Device India

TIP120

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
TIP41C by Comset Semiconductors

TIP41C

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP122TU by Fairchild Semiconductor

TIP122TU

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP125 by Continental Device India

TIP125

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BDW93C by Central Semiconductor

BDW93C

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP147T by Samsung

TIP147T

Samsung

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
TIP142 by Motorola

TIP142

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;
TIP115 by Texas Instruments

TIP115

Texas Instruments

TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.
2N3055 by Aeroflex/metelics

2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5; Package Body Material: METAL;
TIP29C by Continental Device India

TIP29C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
JANTX2N2219A by Vpt Components

JANTX2N2219A

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
BD679A by Onsemi

BD679A

Onsemi

BD679A by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a max collector current of 4A and transition frequency of 10MHz.
JAN2N3055 by Aeroflex/metelics

JAN2N3055

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JEDEC-95 Code: TO-3; No. of Elements: 1;
TIP42C by Central Semiconductor

TIP42C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;