Nexperia - BSR31-Q

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BSR31-Q by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BSR31-Q
Description Power Bipolar Transistors;
Datasheet BSR31-Q Datasheet
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TIP42A by Microsemi

TIP42A

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
BD679A by Central Semiconductor

BD679A

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP120 by Toshiba

TIP120

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Qualification: Not Qualified;
TIP41C by Kec

TIP41C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP3055 by Central Semiconductor

TIP3055

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
2N3055 by Taitron Components

2N3055

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP110 by Samsung

TIP110

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-30 Code: R-PSFM-T3;
TIP125 by Fairchild Semiconductor

TIP125

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
ULN2003APWRG4 by Texas Instruments

ULN2003APWRG4

Texas Instruments

ULN2003APWRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in a small outline package is ideal for complex configurations requiring high reliability.
TIP117 by Onsemi

TIP117

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
TIP120 by Nte Electronics

TIP120

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 2 W;
TIP122 by SPC TECHNOLOGY/ MULTICOMP

TIP122

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3;
TIP41C by Weitron Technology

TIP41C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP147 by Fairchild Semiconductor

TIP147

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
TIP32C by Crimson Semiconductor

TIP32C

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
2N3055 by Micro Electronics

2N3055

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
ULN2004AN by Texas Instruments

ULN2004AN

Texas Instruments

ULN2004AN by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon transistor element material.
TIP111 by Transys Electronics

TIP111

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;
TIP127 by Micro Commercial Components

TIP127

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; Terminal Finish: TIN LEAD;
MJD122T4 by Motorola

MJD122T4

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;