Nexperia - BUK7K8R7-40EX

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BUK7K8R7-40EX by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number BUK7K8R7-40EX
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 225 A; JESD-30 Code: R-PDSO-G6; Package Body Material: PLASTIC/EPOXY;
Datasheet BUK7K8R7-40EX Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 225 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0085 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 84 mJ
Other Names: 568-11414-2
1727-1800-1
BUK7K8R7-40EX-ND
1727-1800-2
568-11414-1
5202-BUK7K8R7-40EXTR
934067811115
568-11414-6-ND
568-11414-2-ND
568-11414-6
568-11414-1-ND
1727-1800-6
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Reference Standard: AEC-Q101; IEC-60134
Peak Reflow Temperature (C): 260
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