Image shown is a representation only.
| Manufacturer | Nexperia |
|---|---|
| Manufacturer's Part Number | BUK9M19-60EX |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 152 A; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; |
| Datasheet | BUK9M19-60EX Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 38 A |
| Maximum Pulsed Drain Current (IDM): | 152 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 4 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .019 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 30 mJ |
| Other Names: |
568-13018-6-ND BUK9M19-60EX-ND 568-13018-2-ND 934070051115 1727-2574-6 568-13018-6 BUK9M19-60E,115 568-13018-1-ND 568-13018-1 5202-BUK9M19-60EXTR 1727-2574-2 568-13018-2 1727-2574-1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Reference Standard: | AEC-Q101; IEC-60134 |
| Peak Reflow Temperature (C): | 260 |
